Organic floating gate field effect transistor and preparation method thereof

Abstract

The invention discloses an organic floating gate field effect transistor and a preparation method thereof, and is characterized in that: the transistor consists of a substrate, an insulating layer I formed on the substrate, a floating gate formed on the insulating layer I, an insulating layer II formed on the floating gate, a semiconductor active layer formed on the insulating layer II, and a source electrode and a drain electrode which are formed on the semiconductor active layer. The preparation method of the organic floating gate field effect transistor comprises the following steps of: (1) growing one insulating layer I on a silicon substrate; (2) preparing a low-resistance silicon film which serves as the floating gate on the insulating layer I by a magnetron sputtering method; (3) growing one insulating layer II on a floating gate layer by a thermal oxidation method; (4) performing vacuum thermal evaporation to form one semiconductor active layer made of an organic semiconductorfilm material on the insulating layer II; (5) performing vacuum thermal evaporation to form one gold film layer which serves as an electrode material of the device on the semiconductor active layer; and (6) performing photoetching on the electrode material to obtain the source electrode and the drain electrode. By the transistor, the information energy of the floating gate can be effectively controlled to be erased.

Description

technical field [0001] The invention relates to an organic floating gate field effect transistor and a preparation method thereof. Background technique [0002] The floating gate field effect transistor is the core device of the integrated circuit storage part, and its usual structure (attached figure 1 ) is to add a layer of floating gate to the insulating layer of ordinary field effect transistors to change the threshold voltage of the device and realize the function of information storage. At present, the floating gate field effect transistor of silicon semiconductor structure mostly adopts the large-scale integrated circuit production process, usually grows multi-layer films on the silicon wafer, and performs photolithography, ion implantation, etching and other operations on the film to obtain the floating gate field effect transistor. It has the advantages of high integration and good reliability, but also has the disadvantages of complicated production, high producti...

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Problems solved by technology

Organic floating gate field-effect transistors used in gas detectors (M.A.Reyes-Barranca, et al, Materials 21(3)5-9, September 2008) and PH environmental tests, such as S.William et al. in the UK, study the memory of organic devices function (S.William, etal, Applied physics letters 95, 093309, 2009.) and the relationship between the capacitance and voltage of the insulating layer, but the above-mentioned device structure and experimental results cannot well solve the problems raised above

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