Resistor material, sputtering target for forming resistive thin film, resistive thin film, thin film resistor and method of producing the same

A technology of resistive film and resistive body, applied in the direction of coating resistive materials, conductive materials dispersed in non-conductive inorganic materials, resistors, etc., can solve the problem of low resistivity, achieve high temperature stability, excellent resistance temperature characteristics, manufacturing cost reduction effect

Active Publication Date: 2011-07-06
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, Ni-Cr alloys have a problem of low resistivity as a resistor material.

Method used

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  • Resistor material, sputtering target for forming resistive thin film, resistive thin film, thin film resistor and method of producing the same
  • Resistor material, sputtering target for forming resistive thin film, resistive thin film, thin film resistor and method of producing the same
  • Resistor material, sputtering target for forming resistive thin film, resistive thin film, thin film resistor and method of producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] As Ni alloy powder, a Ni alloy powder having an average particle diameter of 100 μm was prepared by adding Cr, Al, and Y in a total amount of 40% by mass (Cr:Al:Y=29.5:10.0:0.5 (mass ratio)). On the other hand, as a silicate-based glass powder, B, Mg, Ca, Ba, Al, and Zr were added in a total amount of 50% by mass (B:Mg:Ca:Ba:Zr:Al=2:5:18 : 18:5:2 (mass ratio)) SiO with an average particle size of 10 μm 2 powder.

[0057] These two kinds of powders were mixed so that the addition amount of the silicate-type glass powder was 5 mass %, and it was made into the raw material powder.

[0058] This raw material powder was put into a carbonaceous mold of a desired shape, and hot-pressed using an atmospheric hot-press furnace (AHP) manufactured by Hiroshiki Co., Ltd. (Hirashiki Co., Ltd.). In an inert gas environment where Ar flows at 2L / min, the so-called 200kg / cm 2 Under the conditions of pressure, calcination temperature of 1100° C., and calcination time of 3 hours, the mo...

Embodiment 2

[0071] Except having made the addition amount of the silicate-type glass powder into 3 mass %, it carried out similarly to Example 1, obtained the thin-film resistor, and examined the characteristic.

Embodiment 3

[0073] Except having made the addition amount of the silicate-type glass powder into 10 mass %, it carried out similarly to Example 1, obtained the thin-film resistor, and examined the characteristic.

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Abstract

The aim of the invention is to provide a thin film resistor, a resistor material for manufacturing the thin film resistor and a method of producing the same. The resistivity, resistance-temperature characteristic, high-temperature stability and haloduric aquosity of the thin film resistor are excellent even after being treated at a relatively low temperature. According to the resistor material, 3 to 20 mass percentages of silicate glass is added in a Ni alloy. The Ni alloy contains 10 to 60 mass percentages more than one additional elements selected from Cr, Al and Y, and the remainders are Ni and unavoided impurities. SiO2 is the main component of the silicate glass. Meanwhile, the silicate glass comprises 0 to 90 mass percentages more than one component selected from B, Mg, Ca, Ba, Al , Zr and their oxides.

Description

technical field [0001] The present invention relates to a thin-film resistor as an electronic component, a resistive thin film for obtaining the thin-film resistor, a sputtering target for forming the resistive thin film, a resistor body material for forming the sputtering target, and further, to their manufacture method. Background technique [0002] Thin-film resistors using resistive films have been applied to resistors such as chip resistors, precision resistors, network resistors, and high-voltage resistors; temperature sensors such as temperature-measuring resistors and temperature-sensing resistors; and hybrid integrated circuits and their composites In electronic components such as module products. [0003] For thin film resistors, four characteristics are required: (1) resistance temperature characteristics with an absolute value of the temperature coefficient of resistance (TCR) close to 0; (2) high temperature stability with a small resistance change rate over ti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01C7/00H01C17/12C23C14/34
Inventor 横林贞之杉原雅博
Owner SUMITOMO METAL MINING CO LTD
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