Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing low ripple coefficient semiconductor super-radiation LED

A technology of superluminescence and corrugation coefficient, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of high technical difficulty, high cost requirements, and poor repeatability, so as to improve light transmittance, achieve low cost, and suppress the affected The effect of exciting oscillation

Active Publication Date: 2012-06-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current coating technology can meet these requirements, but the cost requirements are high, the technical difficulty is high, and the repeatability is relatively poor. Therefore, the technical solution that only relies on high-precision coating technology to suppress the optical reflection on the cavity surface has not been well received. Applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing low ripple coefficient semiconductor super-radiation LED
  • Method for producing low ripple coefficient semiconductor super-radiation LED
  • Method for producing low ripple coefficient semiconductor super-radiation LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail with reference to specific embodiments and drawings.

[0043] Such as figure 1 As shown, in order to achieve low ripple coefficient, it is necessary to minimize the cavity surface optical feedback,

[0044] The main measures adopted by the present invention are as follows:

[0045] 1. Waveguide structure of "oblique triangle absorption zone"

[0046] First, the metal-organic chemical vapor deposition (MOCVD) epitaxial technology is used to epitaxially grow the active structure of the die on the InP substrate, including the N-InP buffer layer and the active layer.

[0047] Secondly, a chemical vapor deposition method is used to grow a layer of silicon dioxide mask on the active structure, and the mask is etched by photolithography technology to etch a strip waveguide gain area on one side, and an "oblique triangle" o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for producing a low ripple coefficient semiconductor super-radiation LED, which is realized by combining a waveguide structure of an oblique triangular absorbing area with an optical anti-reflection film with ultra-low reflectivity deposited on a front cavity surface and a rear cavity surface. In the invention, by adopting the waveguide form of the oblique triangular absorbing area, a certain included angle between three sides and corresponding cavity surfaces is maintained, so that the optical transmissivity can be effectively improved; and in addition, with the oblique cavity structure, the stimulated oscillation can be effectively inhibited and the optical feedback of the cavity surface can be reduced. In the film system design, the influence degrees oflow-reflectivity spectral region bandwidth of two-layer film system structures and refractivity deviation and thickness deviation of a film material on the residual refractivity of the film system are better than that of three-layer film system symmetrical structures; and the allowance for the process preparation is larger so as to facilitate the accurate monitoring. The method for producing the low ripple coefficient semiconductor super-radiation LED, which is provided by the invention, is realized by adopting a relatively-simple process and has lower realization cost and process reasonability.

Description

Technical field [0001] The invention relates to the technical field of semiconductor superluminescent light-emitting diodes, in particular to a method for preparing a semiconductor superluminescent light-emitting diode with low ripple coefficient. Background technique [0002] A superluminescent diode is a semiconductor light-emitting device with optical performance between light-emitting diodes and lasers. Its main characteristics are: it has the advantages of high output power of the laser pigtail, and has the wide spectrum of light-emitting diodes and small ripple coefficient. Based on its special optical properties, it can be widely used in fiber optic gyroscope technology that is of great significance in national defense and become the core component of the next generation of precision inertial guidance. [0003] In order to further improve the signal-to-noise ratio of fiber optic gyroscopes, medium and high precision fiber optic gyroscopes usually choose super-luminescent dio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/46H01L33/44
Inventor 谭满清焦健
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com