Solar cell based on III-V group compound semiconductor/silicon nanometer bore column array and preparation method thereof

A III-V, silicon nanoporous column technology, applied in semiconductor devices, circuits, photovoltaic power generation, etc., can solve the problems of low conversion efficiency and high battery manufacturing cost, achieve low cost, increase short-circuit current, and wide-spectrum light absorption characteristics Effect

Inactive Publication Date: 2011-07-20
ZHENGZHOU UNIV
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  • Abstract
  • Description
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Problems solved by technology

At present, the solar cells on the market are mainly silicon-based solar cells with mature technology, but the manufacturing cost of the cells is high and the conversion efficiency is low.

Method used

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  • Solar cell based on III-V group compound semiconductor/silicon nanometer bore column array and preparation method thereof
  • Solar cell based on III-V group compound semiconductor/silicon nanometer bore column array and preparation method thereof
  • Solar cell based on III-V group compound semiconductor/silicon nanometer bore column array and preparation method thereof

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Embodiment Construction

[0020] Below in conjunction with accompanying drawing and embodiment the present invention is described in detail:

[0021] like figure 1 As shown, a solar cell based on a III-V compound semiconductor / silicon nanohole column array of the present invention includes a transparent conductive film 1 (indium tin oxide ITO), an n-type III-V compound semiconductor 2 (n-type unintentionally doped heterogallium nitride nanorod array), p-type silicon nanohole column array 3, p-type single crystal silicon layer 4 and metal conductive film layer 5 (aluminum), upper contact electrode 6 and lower contact electrode 7, in which p-type silicon nano Hole column array 3 covers the top surface of p-type single crystal silicon layer 4, n-type III-V group compound semiconductor 2 and p-type silicon nano-hole column array 3 form a heterojunction; transparent conductive film 1 is deposited on n-type III-V The surface of the group compound semiconductor 2 is used as the top electrode, and the bottom ...

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Abstract

The invention discloses a solar cell based on an III-V group compound semiconductor/silicon nanometer bore column array, which comprises an upper contact electrode, a lower contact electrode, a transparent conductive film, an n-type III-V group compound semiconductor, a p-type silicon nanometer bore column array, a p-type monocrystalline silicon layer and a metal conductive film layer, wherein the p-type silicon nanometer bore column array is covered on the top surface of the p-type monocrystalline silicon layer; the n-type III-V group compound semiconductor and the p-type silicon nanometer bore column array form heterojunction; the transparent conductive film is deposited on the surface of the n-type III-V group compound semiconductor; and a layer of metal conductive film serving as a back electrode is deposited on the bottom surface of the p-type monocrystalline silicon layer. In the solar cell, silicon nanoparticles and an III-V group compound semiconductor nanometer unit have continuous particle size distribution, so spectra can be absorbed continuously within a certain range, photons positioned in different frequency spectra in sun light can efficiently excite photon-generated carriers, and the photoelectric conversion efficiency of the cell is improved effectively.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials and new energy, and in particular relates to a solar cell based on a III-V compound semiconductor / silicon nanohole column array and a preparation method thereof. Background technique [0002] At present, under the background of the intensifying world energy crisis, with the continuous innovation of traditional silicon cells and the emergence of new solar cells, new concepts have begun to appear in solar cell technology. In a sense, it heralds the development of solar cells Technology trends. At present, the solar cells on the market are mainly silicon-based solar cells with mature technology, but the manufacturing cost of the cells is high and the conversion efficiency is low. New solar cells are mainly developed in the direction of thin film, laminated and new concept solar cells, especially the introduction of nanotechnology, which provides a new way to improve the efficiency of solar cel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/04H01L31/18
CPCY02E10/50Y02P70/50
Inventor 李新建韩昌报贺川王伶俐常立红
Owner ZHENGZHOU UNIV
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