Method for realizing self-assembly of zinc oxide nanometer wires

A zinc oxide nanowire and self-assembly technology, applied in the field of nano-processing, can solve problems affecting the performance of thin-film devices, lack of nanowire films, and nanowire films that are not suitable for manufacturing devices.

Inactive Publication Date: 2011-08-03
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For zinc oxide nanowires, there is still a lack of effective methods to prepare nanowire films
Prepare a layer of gold nanoparticle film on the surface of the silicon wafer as a catalyst to prepare a nanowire film, but because the presence of the catalyst will affect the performance of the film device, it is even impossible to use this film to prepare the device, so the nanowire film prepared by this method Thin films are not suitable for making devices

Method used

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  • Method for realizing self-assembly of zinc oxide nanometer wires

Examples

Experimental program
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Effect test

Embodiment 1

[0019] The first step is to clean the silicon wafer. First, put the silicon wafer with the silicon dioxide insulating layer into 50 ml of ethanol, perform ultrasonic cleaning for 10 minutes, take it out and blow dry with nitrogen; then, put the silicon wafer in 50 ml of acetone and perform ultrasonic cleaning for 10 minutes. Take it out and blow dry with nitrogen; finally put the silicon wafer into 100 ml of deionized water for ultrasonic cleaning for 10 minutes, take it out and blow dry with nitrogen.

[0020] The second step is the hydroxylation of the silicon wafer surface. Prepare a solution with a volume ratio of sulfuric acid (98% concentration) and hydrogen peroxide (30% concentration) at a volume ratio of 2.5:1, put the cleaned silicon wafers into the solution, and cook at 90°C for 2.5 hours. After cooking, put the silicon wafers Take it out and wash it repeatedly with deionized water. Finally, put the silicon wafer into deionized water, boil it at 80°C for 20 minutes, ...

Embodiment 2

[0025] The first step is to clean the silicon wafer. First, put the silicon wafer with the silicon dioxide insulating layer into 50 ml of ethanol, perform ultrasonic cleaning for 10 minutes, take it out and blow dry with nitrogen; then, put the silicon wafer in 50 ml of acetone and perform ultrasonic cleaning for 10 minutes. Take it out and blow dry with nitrogen; finally put the silicon wafer into 100 ml of deionized water for ultrasonic cleaning for 10 minutes, take it out and blow dry with nitrogen.

[0026] The second step is the hydroxylation of the silicon wafer surface. Prepare a solution with a volume ratio of sulfuric acid (98% concentration) and hydrogen peroxide (30% concentration) in a volume ratio of 2.5:1, put the cleaned silicon wafers into the solution, and cook at 90°C for 2 hours. After cooking, put the silicon wafers Take it out and wash it repeatedly with deionized water. Finally, put the cleaned silicon wafer into deionized water, boil it at 80°C for 25 min...

Embodiment 3

[0031] The first step is to clean the silicon wafer. First, put the silicon wafer with the silicon dioxide insulating layer into 50 ml of ethanol, perform ultrasonic cleaning for 10 minutes, take it out and blow dry with nitrogen; then, put the silicon wafer in 50 ml of acetone and perform ultrasonic cleaning for 10 minutes. Take it out and blow dry with nitrogen; finally put the silicon wafer into 100 ml of deionized water for ultrasonic cleaning for 10 minutes, take it out and blow dry with nitrogen.

[0032] The second step is the hydroxylation of the silicon wafer surface. Prepare a solution with a volume ratio of sulfuric acid (98% concentration) and hydrogen peroxide (30% concentration) in a volume ratio of 2.5:1, put the cleaned silicon wafers into the solution, and cook at 90°C for 3 hours. After cooking, put the silicon wafers Take it out and wash it repeatedly with deionized water. Finally, put the cleaned silicon wafer into deionized water, boil it at 80°C for 30 min...

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Abstract

The invention relates to a method for realizing the self-assembly of zinc oxide nanometer wires in the field of nanometer processing, which comprises the following steps of: performing hydroxylation and amination on the surfaces of silicon wafers sequentially, and immersing the silicon wafers in dispersion liquid of the zinc oxide nanometer wires, which is subjected to surface modification by lauryl sodium sulfate, to realize the self-assembly. The method is simple, convenient and efficient, and the prepared zinc oxide nanometer wire membranes are suitable for preparing high-quality devices.

Description

Technical field [0001] The invention relates to a method in the technical field of nano processing, in particular to a method for realizing self-assembly of zinc oxide nanowires. Background technique [0002] Zinc oxide nanowires have excellent semiconductor properties, optical properties, and piezoelectric properties. They have received extensive attention and have been studied in depth. Zinc oxide nanowires can be used to prepare field effect transistors, ultraviolet light detectors, gas sensors, solar cells, nano generators, and field emission devices. The prerequisite for preparing the zinc oxide nanowire thin film device is to obtain a thin film with good uniform distribution of nanowires. For zinc oxide nanowires, there is still a lack of effective methods to prepare nanowire films. Preparing a layer of gold nanoparticle film on the surface of silicon wafer as a catalyst can produce nanowire films, but because the presence of catalysts will affect the performance of thin ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50
Inventor 张亚非戴振清魏良明徐东回兵
Owner SHANGHAI JIAO TONG UNIV
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