Unlock instant, AI-driven research and patent intelligence for your innovation.

Near infrared photoluminescent film and preparation methods thereof

A technology of photoluminescence and thin film, which is applied in the field of near-infrared photoluminescence thin film and its preparation, can solve the problems of low light absorption rate and limited utilization of sunlight by single crystal silicon, achieve high transmittance, and the method is simple and easy line effect

Inactive Publication Date: 2011-08-03
INST OF CHEM CHINESE ACAD OF SCI
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, single crystal silicon materials only have strong absorption for near-infrared light near 900nm, and have low light absorption rates for other wavelength bands.
However, due to the fact that the light in the near-infrared region accounts for only a small proportion of the sunlight reaching the earth's surface, the utilization of sunlight by single crystal silicon is very limited.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Near infrared photoluminescent film and preparation methods thereof
  • Near infrared photoluminescent film and preparation methods thereof
  • Near infrared photoluminescent film and preparation methods thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Example 1, CdS 0.95 Se 0.05 Preparation of photoluminescent thin films

[0042] CdO 0.0128g, S powder 0.0015g and Se powder 0.0002g are dispersed in water to obtain an aqueous solution (wherein, the mass percentages of CdO, S powder and Se powder in the aqueous solution are respectively 5.12%, 0.60%, 0.08%). The solution was made into a film by pulling method, and then the film was dried in a drying oven with constant humidity and temperature (humidity was 30%, temperature was 40°C) for 6 hours, and then put into an Ar gas-protected calciner for further processing. Calcination for 4h, wherein the temperature of calcination is 300°C, to obtain CdS 0.95 Se 0.05 A photoluminescence thin film, the thickness of the thin film is 30nm.

[0043] The absorption-emission spectrogram of the thin film prepared in this embodiment is as follows figure 1 shown.

Embodiment 2

[0044] Embodiment 2, ZnSe 0.95 Te 0.05 Preparation of photoluminescent thin films

[0045] ZnO 0.0081g, Se powder 0.0037g and Te powder 0.0003g are dispersed in water to obtain an aqueous solution (wherein, the mass percentages of ZnO, Se powder and Te powder in the aqueous solution are respectively 3.24%, 1.48%, 0.12%), and use Spin-coat the solution into a film, then place the film in a drying oven with constant humidity and temperature (humidity is 30%, temperature is 40°C) to dry for 6h, and then put it into an Ar gas-protected calciner for further processing. Calcined for 10h, wherein the temperature of calcination is 600°C, to obtain ZnSe 0.95 Te 0.05 A photoluminescence thin film, the thickness of the thin film is 35nm.

[0046] The absorption-emission spectrogram of the thin film prepared in this embodiment is as follows figure 2 shown.

Embodiment 3

[0047] Example 3, Ag 2 Te 0.95 S 0.05 Preparation of photoluminescent thin films

[0048] Ag 2 O 0.0232g, Te powder 0.0061g and S powder 0.0001g are dispersed in water to obtain an aqueous solution (wherein, the Ag in the aqueous solution 2 The mass percentage composition of O, Te powder and S powder is respectively 9.28%, 2.44%, 0.04%), and this solution is made into film with spin coating method, then this film is placed in the oven of constant humidity and temperature (humidity 30%, the temperature is 40 ℃) after drying in 6h, put into the calcination furnace of Ar gas protection to carry out calcination 21h, wherein the temperature of calcination is 400 ℃, obtain Ag 2 Te 0.95 S 0.05 A photoluminescence thin film, the thickness of the thin film is 40nm.

[0049] The absorption-emission spectrogram of the thin film prepared in this embodiment is as follows image 3 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a near infrared photoluminescent film for a monocrystalline silicon solar cell and preparation methods of the photoluminescent film. The film comprises a semiconductor nanomaterial. The semiconductor nanomaterial refers to MxAyB1-y nanocrystals or core-shell particles formed by the MxAyB1-y nanocrystals, wherein M is Cd, Zn, Ag or Pb; A and B are S, Se or Te; x is 1 or 2; and y is 0 or 1. The invention also provides two preparation methods of the film. By adopting the preparation methods, the semiconductor nanomaterial can be prepared into the photoluminescent film by adopting a film preparing technology, and the photoluminescent film can also be prepared by the steps of preparing a film from an oxide corresponding to a precursor of the semiconductor nanomaterial and a metal simple substance and performing in-situ calcination. By adopting the photoluminescent film prepared with the preparation methods, visible light of between 350 nanometers and 700 nanometers can be converted into near infrared light of between 500 nanometers and 1,500 nanometers, and the photoelectric conversion efficiency of a monocrystalline silicon solar cell can be greatly improved.

Description

technical field [0001] The invention relates to a photoluminescence film and a preparation method thereof, in particular to a near-infrared photoluminescence film and a preparation method thereof. Background technique [0002] Solar photovoltaic power generation is the main body of future energy supply, and it is possible to replace traditional energy and become the main component of new energy. At present, crystalline silicon solar cells are the fastest-developed solar cells, and among them, monocrystalline silicon solar cells have the highest photoelectric conversion efficiency, which can reach 25%-30%. However, single crystal silicon materials only have strong absorption for near-infrared light near 900nm, and have low light absorption rates for other wavelength bands. However, since the light in the near-infrared region only accounts for a small proportion of the sunlight reaching the earth's surface, the utilization of sunlight by single crystal silicon is very limited...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/88H01L31/0296C08L29/04C08L39/06C08L33/12
Inventor 姚建年詹传郎曾怡
Owner INST OF CHEM CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com