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High-purity crystalline silicon, high-purity silicon tetrachloride, and processes for producing same

A technology of silicon tetrachloride and manufacturing method, which is applied in the direction of chemical instruments and methods, silicon compounds, silicon halide compounds, etc., can solve the problems of pollution influence, poor thermal expansion coefficient of reactor, damage, etc., and achieve excellent economy and equipment Simple and less waste effect

Inactive Publication Date: 2011-08-03
JNC CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, in this method, the crystalline silicon obtained by the reaction grows from the wall of the reactor, so it is easily affected by contamination from the reactor, and there is a difference between the thermal expansion coefficient of the reactor itself and the crystalline silicon. Poor and damaged, so this method is hardly used in industry

Method used

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  • High-purity crystalline silicon, high-purity silicon tetrachloride, and processes for producing same
  • High-purity crystalline silicon, high-purity silicon tetrachloride, and processes for producing same
  • High-purity crystalline silicon, high-purity silicon tetrachloride, and processes for producing same

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Embodiment 1

[0101]

[0102] The silicon tetrachloride used as a raw material is the following industrially used silicon tetrachloride (organosilicon compound content: 3.5ppmw, boron content: 0.14ppbw), which is suitable for industrial use of metal silicon (purity About 98% by weight) reacted with hydrogen chloride and obtained by distillation of the reactant. The above-mentioned silicon tetrachloride was introduced into an adsorption tower filled with 20 kg of silica gel, and circulated at a temperature of 20° C. and a flow rate of 1000 L / h for 24 hours to reduce the boron content. The boron content of silicon tetrachloride after the adsorption treatment is 0.05 ppbw or less which is the detection limit. Also, after vaporizing silicon tetrachloride at 100°C, the silicon tetrachloride was passed through a superheater heated to a temperature of 1100°C with a residence time of 1 second to carbonize and remove the organosilicon compound, and then cooled and collected. Then carry out rectif...

Embodiment 2

[0113]

[0114] The silicon tetrachloride used as raw material is to use the following industrially used silicon tetrachloride (organosilicon compound content: 4.6ppmw, boron content: 8ppbw), which is suitable for industrial metal silicon (purity approx. It is obtained by distillation of the reactant obtained by reacting 98 wt%) with hydrogen chloride. The above-mentioned silicon tetrachloride was introduced into an adsorption tower filled with 20 kg of silica gel, and circulated at a temperature of 20° C. and a flow rate of 1200 L / h for 20 hours to reduce the boron content. The boron content of silicon tetrachloride after the adsorption treatment is 0.05 ppbw or less which is the detection limit. Also, after vaporizing silicon tetrachloride at 100°C, the silicon tetrachloride was passed through a superheater heated to a temperature of 1200°C with a residence time of 1 second to carbonize and remove the organosilicon compound, and then cooled and collected. Then carry out r...

Embodiment 3

[0124]

[0125] The silicon tetrachloride used as a raw material is to use the following industrially used silicon tetrachloride (organosilicon compound content: 11.7ppmw, boron content: 2ppbw), which is suitable for industrial metal silicon (purity approx. It is obtained by distillation of the reactant obtained by reacting 98 wt%) with hydrogen chloride. The above-mentioned silicon tetrachloride was introduced into an adsorption tower filled with 30 kg of silica gel, and circulated at a temperature of 20° C. and a flow rate of 1100 L / h for 24 hours to reduce the boron content. The boron content of the silicon tetrachloride after adsorption treatment is less than or equal to 0.05ppbw of the detection limit. Then, after vaporizing silicon tetrachloride at 100° C., the silicon tetrachloride was passed through a superheated tube heated to a temperature of 1200° C. for a residence time of 3 seconds to carbonize and remove the organosilicon compound, and then cooled and collected...

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Abstract

An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200 DEG C, whereby crude crystalline silicon is formed at a chip part of a silicon tetrachloride gas-supplying nozzle, and the crude crystalline silicon is grown downward from the chip part of the silicon tetrachloride gas-supplying nozzle; the grown crude crystalline silicon is discharged to an outside of the reactor, and the discharged crude crystalline silicon is subjected to acid treatment.

Description

technical field [0001] The present invention relates to high-purity crystalline silicon used in silicon for semiconductors and silicon for solar cells and its production method, and high-purity silicon tetrachloride used in the production of high-purity crystalline silicon and its production method. Background technique [0002] High-purity crystalline silicon is used as a raw material of silicon for semiconductors and silicon for solar cells. Especially in recent years, the demand for high-purity crystalline silicon as a raw material has also increased along with the dramatic expansion of the spread of solar cells. [0003] Currently, as high-purity crystalline silicon used as a raw material of silicon for solar cells, scrap products such as crucible residues after pulling silicon for semiconductors and cutting chips of silicon ingots are used. Therefore, the quality and quantity of high-purity crystalline silicon used in solar cells are chronically in short supply as a re...

Claims

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Application Information

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IPC IPC(8): C30B29/06C01B33/033
CPCC30B29/06C01B33/033C01B33/1071C01B33/107C30B15/00Y10T117/10
Inventor 林田智加藤渉
Owner JNC CO LTD
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