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Silicon carbide power module and packaging method thereof

A technology of power modules and packaging methods, which is applied in the manufacturing of electrical components, electric solid state devices, semiconductor/solid state devices, etc., can solve the problems of poor thermal cycle capability, lack of mechanical strength, lack of reliability, etc. Avoid thermal expansion mismatch and facilitate heat dissipation

Active Publication Date: 2011-08-10
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method lacks reliability under high-power, high-temperature operating conditions, has poor thermal cycle capability, and does not have sufficient mechanical strength

Method used

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  • Silicon carbide power module and packaging method thereof
  • Silicon carbide power module and packaging method thereof
  • Silicon carbide power module and packaging method thereof

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Embodiment Construction

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0033] The present invention proposes a set of crimping packaging solutions suitable for parallel connection of silicon carbide multi-chips. This solution adopts reasonable structural design and suitable packaging materials, and is widely applicable to silicon carbide thyristors, diodes, MOSFETs, IGBTs, JEFTs, BJTs, etc. The power device enables the device to work stably at a high temperature of 250°C, and the heat dissipation density can reach 450W / cm2. In addition, this method not only solves the problem of uneven pressure receiving force of multi-chips, but also makes packaging very convenient.

[0034] Silicon carbide multi-chip parallel crimp packaging has the advantages of convenient operation, high stability, and strong the...

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PUM

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Abstract

The invention relates to a packaging method of a silicon carbide power module, comprising the following steps of: welding an aluminium nitride isolated layer on a molybdenum plate, placing silicon carbide chips into empty spaces of the aluminium nitride isolated layer to be welded with the molybdenum plate; welding molybdenum blocks on the silicon carbide chips, reserving gate lead slots on the molybdenum blocks; placing leads into the gate lead slots, welding and fixing, collecting the leads and leading the leads out; casting and moulding the molybdenum blocks, the silicon nitride isolated layer and the silicon carbon chips in an integrating way, mounting a base, a tube shell and a tube cap, and packaging. The invention also provides a silicon carbide power module. By adopting the method provided by the invention, the silicon carbon power module has higher reliability and stronger thermal cycle capability under the working conditions of high power and high temperature.

Description

technical field [0001] The invention relates to the field of silicon carbide power device packaging, in particular to a method for packaging a silicon carbide power module and the silicon carbide power module. Background technique [0002] Power semiconductor devices are widely used in computer, network communication, consumer electronics, industrial control, automotive electronics, locomotive traction, steel smelting, high-power power supply, power system and other fields. In addition to ensuring the normal operation of these devices, power devices can also play a role Effective energy saving is indispensable in the development of low-carbon economy, energy conservation and emission reduction, and control of climate warming. [0003] Traditional silicon-based power devices are limited by the inherent physical properties of silicon materials, and have encountered insurmountable difficulties in high-frequency and high-power applications. In this case, power devices based on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/58H01L21/60H01L23/488H01L23/29H01L25/00
CPCH01L24/01H01L2924/1301H01L2924/13055H01L2924/13091H01L2924/351
Inventor 丁荣军罗海辉刘博曾文彬雷云吴煜东刘国友彭勇殿张明
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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