Oxide resistor storage device and preparation method thereof

A resistance storage and oxide technology, applied in the direction of electrical components, etc., can solve the problems of resistance change stability, cycle durability resistance state retention characteristics and other unsatisfactory performance, to enhance data retention characteristics, improve reliability characteristics, preparation process simple effect

Active Publication Date: 2011-08-10
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the resistive switching stability, cycle durability, and resistance state retention characteristics of oxide resistive memory devices during cyclic transitions between high-resistance states and low-resistance states are not ideal, and cannot meet the needs of practical applications.

Method used

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  • Oxide resistor storage device and preparation method thereof
  • Oxide resistor storage device and preparation method thereof
  • Oxide resistor storage device and preparation method thereof

Examples

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Embodiment Construction

[0028] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0029] Such as figure 1 As shown, the present invention provides an oxide resistance memory device, comprising a substrate 1, a bottom electrode 2 on the substrate 1, an oxide control layer 3 on the bottom electrode 2, and an oxide control layer 3 on the oxide control layer 3. The oxide resistive layer 4, and the top electrode 5 located on the oxide resistive layer. Substrate 1 selection material SiO 2 / Si,Al 2 o 3 , borosilicate glass or quartz glass. The top electrode 5 is made of thin film material platinum / titanium (Pt / Ti), gold / titanium (Au / Ti), titanium (Ti), tungsten (W), tantalum (Ta), TiN, TaN, strontium niobate-doped titanate Either made. The bottom electr...

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Abstract

The invention discloses an oxide resistor storage device, which comprises a substrate, a bottom electrode positioned on the substrate, an oxide control layer positioned on the bottom electrode, an oxide resistance change layer positioned on the oxide control layer, and a top electrode positioned on the oxide resistance change layer. The device is simple in preparation process and reliable in performance, the circulating durability of the resistance change of an oxide resistance change storage is improved and the data retention performance is improved.

Description

technical field [0001] The invention relates to the technical field of non-volatile memory devices, in particular to an oxide resistance memory device and a preparation method thereof. Background technique [0002] Non-volatile memory has the advantage of data retention when power is off, and is one of the research hotspots in current storage technology. However, today's mainstream non-volatile memory - flash memory (flash) has problems such as high operating voltage, slow speed, and poor endurance. Resistive random access memory (Resistance Random Access Memory, RRAM) has shown the advantages of simple structure, fast working speed, high storage density and good compatibility with CMOS technology, and is one of the important candidates for the new generation of non-volatile semiconductor memory. The basic memory cell of RRAM is a metal-insulator-metal (MIM) structured resistor. By means of voltage or current pulses, the resistance of the MIM structure can be switched betw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 刘力锋高滨陈冰张飞飞李博洋于迪陈沅沙康晋锋韩汝琦
Owner PEKING UNIV
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