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Method for preparing semiconductor T-shaped gate electrode by utilizing photon beam super-diffraction technology

A super-diffraction and photon beam technology, applied in semiconductor devices, optomechanical equipment, optics, etc., can solve problems such as poor flexibility, high production cost, and low efficiency, and achieve small graphic feature sizes, low equipment operating costs, and total exposure. large area effect

Inactive Publication Date: 2011-08-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the production cost of electron beam exposure is too high, and it cannot be produced in a large area, and the efficiency is low
Nanoimprint technology needs to make an imprint template, which is expensive to make and cannot be modified after the template is made, so the flexibility is poor
Therefore, the production of T-shaped grids has always troubled craftsmen.

Method used

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  • Method for preparing semiconductor T-shaped gate electrode by utilizing photon beam super-diffraction technology
  • Method for preparing semiconductor T-shaped gate electrode by utilizing photon beam super-diffraction technology
  • Method for preparing semiconductor T-shaped gate electrode by utilizing photon beam super-diffraction technology

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Embodiment Construction

[0023] see Figure 1-Figure 8 As shown, the present invention provides a kind of method that utilizes photon beam superdiffraction technology to prepare semiconductor T-type grid electrode, comprises the steps:

[0024] Step 1: If figure 1 As shown, a dielectric passivation layer 20 is deposited on the sample 10 to be prepared with a T-shaped gate. The thickness of the dielectric passivation layer 20 is 50-100 nm, and the material of the dielectric passivation layer 20 is silicon nitride, silicon dioxide or Aluminum oxide; the material of the sample 10 can be gallium nitride, arsenic nitride or indium phosphide and other group III and five semiconductors, and can also be silicon;

[0025] Step 2: If figure 2 As shown, a resist 30 is coated on the dielectric passivation layer 20, and the resist 30 is electron beam glue or ordinary ultraviolet photoresist; according to the size of the gate foot pattern 31 to be obtained, electron beam can be used. Glue (gate pattern, ≤0.1μm)...

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Abstract

The invention provides a method for preparing a semiconductor T-shaped gate electrode by utilizing a photon beam super-diffraction technology. The method comprises the following steps: 1. depositing a dielectric passivation layer on a sample of a T-shaped gate to be prepared; 2. coating a resist on the dielectric passivation layer; 3. exposing, developing and fixing the resist by utilizing the photon beam super-diffraction nano-processing technology to form a gate foot pattern; 4. etching the dielectric passivation layer below the gate foot pattern by using the RIE (reactive ion etching) technology to form a groove; 5. washing off the residual resist and coating a photoresist on the dielectric passivation layer; 6. exposing, developing and fixing the photoresist by utilizing the photon beam super-diffraction nano-processing technology to form a gate head pattern; 7. evaporating the photoresist to form gate metal; and 8. removing the photoresist and forming a three-dimensional T-shaped metal electrode in the groove on the dielectric passivation layer and on the gate head pattern.

Description

technical field [0001] The invention relates to the field of semiconductor material and device manufacturing, in particular to a method for preparing a semiconductor T-shaped gate electrode by using photon beam super-diffraction technology. Background technique [0002] The so-called photon beam superdiffraction nanofabrication technology is an emerging femtosecond pulsed laser two-photon micro-nanofabrication technology that utilizes the two-photon effect and the threshold effect of the interaction between laser and matter. [0003] As one of the important advanced manufacturing technologies, laser processing technology has been widely used in many industrial manufacturing fields. When using laser direct writing technology for material processing, the processing resolution that can be achieved has been limited by the diffraction limit of classical optical theory, which is difficult to achieve. processing at the nanometer scale. The emergence of femtosecond pulsed laser not...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28G03F7/00
Inventor 颜伟杜彦东韩伟华杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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