Method for manufacturing micro-column array, array structure and method for growing crystalline material

Abstract

The invention relates to a method for manufacturing a micro-column array, an array structure and a method for growing a crystalline material. The method for manufacturing the micro-column array comprises the following steps of: providing a first crystal layer; placing the first crystal layer into a selective erosion environment, wherein an adopted selection erosion technology erodes a crystal face at first, the crystal face and the surface of the first crystal layer form an angle, and the angle is more than 0 and less than 90 degrees so as to form a concave part at a defected position on the surface of the first crystal layer; and keeping executing selective erosion on the surface of the first crystal layer to expand the concave part and expose a non-staggered part, and forming the micro-column array consisting of the non-staggered part of the first crystal layer. The invention has the advantages that: by the selection erosion technology, a window area, which extends outward transversely, of the micro-column array consisting of the non-staggered area is formed, so the staggering density of the retained window area is reduced and an ELOG technology can give full play of the advantage of reducing the staggering density.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and processes, in particular to a method for preparing a microcolumn array, an array structure and a method for growing crystal materials. Background technique [0002] Compound semiconductor materials represented by GaN are used as wide-bandgap semiconductor materials with direct bandgap in blue, green, purple, ultraviolet and white light-emitting diodes (LEDs), laser diodes (LDs), ultraviolet light detectors and power electronic devices, etc. Optoelectronic devices and electronic devices, as well as semiconductor devices under special conditions, have broad application prospects and attract people's strong interest. [0003] Since most of the compound semiconductors currently cannot obtain commercial high-quality bulk substrate materials, the compound semiconductor materials are generally grown by heterogeneous substrate epitaxy. However, due to the large lattice mismatch between ...

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Problems solved by technology

[0005] The disadvantage of ELOG in the prior art is that although a part of the dislocations are covered by the mask area, there are still dislocations in the remaining window area, and these dislocations will remain in the subsequent epitaxial layer, so that the ELOG process cannot Give full play to its advantages of reducing dislocation density

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