Method for growing phosphorus-silicon-cadmium single crystal

A growth method and cadmium phosphorus technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of serious vapor convection above the melt, difficult control of flat interface growth, and difficulty in spontaneous nucleation growth. Ensuring single crystal yield, inhibiting vapor convection and fusible melt convection

Inactive Publication Date: 2011-08-31
SHANDONG UNIV
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has disadvantages such as high requirements on equipment, difficulty in spontaneous nucleation and growth, difficulty in maintaining flat interface growth control, and severe vapor convection above the melt. The grown crystals are prone to crystal defects such as twins and component deviations from the stoichiometric ratio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for growing phosphorus-silicon-cadmium single crystal
  • Method for growing phosphorus-silicon-cadmium single crystal
  • Method for growing phosphorus-silicon-cadmium single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1, single temperature zone synthesis of cadmium phosphorus silicon polycrystalline material and single crystal growth of cadmium phosphorus silicon cadmium, the steps are as follows:

[0034] 1. Preparation of cadmium phosphorus silicon polycrystalline material

[0035] Put three elemental elements with a purity of 99.999% into a graphite crucible at a ratio of silicon: cadmium: phosphorus = 1:1:2, put the graphite crucible into a quartz tube, and evacuate to 2×10 -4 Seal the quartz tube after Pa. Put the quartz tube into a vertical tubular resistance furnace, raise the temperature of the resistance furnace from room temperature to 350°C at a rate of 30°C / h, and keep it at 350°C for 10-30h. Then the temperature was raised from 350°C to 1150°C at a heating rate of 10°C / h, kept at 1150°C for 20 hours, and then lowered to room temperature. Open the quartz tube, and what is obtained in the graphite crucible is the polycrystalline material of phosphorus, silicon...

Embodiment 2

[0039] Embodiment 2, single-temperature-zone synthesis of cadmium-phosphorus-silicon polycrystalline material and growth of cadmium-phosphorus-silicon single crystal, the steps are as follows:

[0040] 1, the synthesis of phosphorus-silicon-cadmium polycrystalline material, as described in embodiment 1 step 1, the difference is: in the synthesis of phosphorus-silicon-cadmium polycrystalline material, three kinds of elemental elements are by silicon: cadmium: phosphorus=1: 1: The ratio of 2.02 is packed in the graphite crucible, and other steps and parameters are all the same as in Example 1.

[0041] 2. Phosphorous silicon cadmium single crystal growth

[0042] Put the cadmium phosphorus silicon seed crystal into the seed bag of the boron nitride growth crucible, then put the cadmium phosphorus silicon polycrystalline material synthesized in step 1 into the boron nitride growth crucible, and put the boron nitride growth crucible into In the quartz tube, evacuate to 2×10 -4 A...

Embodiment 3

[0043] Embodiment 3, as described in Example 1, the difference is: in step 2, the temperature in the high temperature zone is kept at 1160°C, the temperature gradient in the gradient zone is at 8°C / cm, and the temperature in the low temperature zone is kept at 1090°C; After 30 hours of heat preservation in the high temperature zone, the crucible was lowered.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
band gapaaaaaaaaaa
melting pointaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for growing a phosphorus-silicon-cadmium single crystal. 1 part of silicon, 1 part of cadmium and 2-2.05 parts of phosphorus are synthesized into a phosphorus-silicon-cadmium polycrystal material, and the phosphorus-silicon-cadmium single crystal is grown by a crucible descending furnace by using a spontaneous nucleation growing method or oriented seed crystal growing method. The method comprises the following steps: directly filling the phosphorus-silicon-cadmium polycrystal material into a crucible, or filling the phosphorus-silicon-cadmium polycrystal material into the crucible after adding the seed crystal; putting the crucible into a silica tube, vacuumizing, and sealing the silica tube; putting the silica tube into a crucible descending furnace; and heating, descending the crucible, and finally cooling. The method provided by the invention can be used for preparing the high-purity high-quality phosphorus-silicon-cadmium single crystal.

Description

technical field [0001] The invention relates to the preparation of an infrared nonlinear optical material cadmium-phosphorus-silicon single crystal, in particular to a growth method for a cadmium-phosphorus-silicon single crystal. Background technique [0002] Mid-to-far infrared lasers have many applications in military and civilian fields. Using infrared nonlinear optical crystals for frequency conversion is one of the effective methods to generate continuously tunable mid- and far-infrared lasers. At present, the widely studied infrared nonlinear optical crystals include phosphorous germanium zinc, sulfur gallium silver, selenium gallium silver and so on. Phosphorus germanium zinc has excellent nonlinear optical properties and thermal properties, which can meet the requirements of generating high-power mid-infrared lasers. However, due to the large defect absorption of phosphorus germanium zinc at about 1 μm, it cannot be used in a wider range of about 1 μm. For fundame...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/10
Inventor 陶绪堂张国栋王善朋施琼阮华棚蒋民华
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap