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Surface modification method for silicon quantum dots

A silicon quantum dot and surface modification technology, which is applied in the field of surface modification and modification of nanomaterials, can solve the problem of no carbon radical reaction modification of silicon quantum dots, etc., and achieve easy control of reaction conditions, short reaction time, and simple process Effect

Active Publication Date: 2011-09-07
上海氢程科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, there has been no report on the modification of silicon quantum dots by carbon radical reactions

Method used

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  • Surface modification method for silicon quantum dots
  • Surface modification method for silicon quantum dots
  • Surface modification method for silicon quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A method for modifying the surface of silicon quantum dots, comprising the steps of:

[0029] Weigh 3 mg of newly prepared silicon quantum dots and place them in a double-necked flask, add 150 mg of succinic acid peroxide and 3 ml of dichlorobenzene solution, stir and heat to 120 ° C under anhydrous and oxygen-free conditions, and after 10 minutes, put them in the flask A large number of bubbles overflowed, indicating that succinic anhydride peroxide decomposed to release carbon dioxide and CH 2 CH 2 COOH radical, .CH 2 CH 2 COOH radicals react rapidly with Si quantum dots to obtain water-soluble Si-(CH 2 CH 2 COOH)n, after continuing to react for 1 hour, the product after the reaction is transferred to a separatory funnel, pure water is added, extracted, and the functionalized water-soluble silicon quantum dots are transferred to the water phase; the silicon quantum dot aqueous solution is transferred to the dialysis bag, dialyzed in pure water for 24 hours to rem...

Embodiment 2

[0031] A method for modifying the surface of silicon quantum dots, comprising the steps of:

[0032] Weigh 3mg of silicon quantum dots newly prepared by electrochemical corrosion and place them in a two-necked flask, add 150mg of dibenzoyl peroxide and 3ml of dichlorobenzene solution, stir and heat to 120°C under anhydrous and oxygen-free conditions , after 10 minutes, a large number of bubbles overflowed from the flask, indicating that malonamide peroxide decomposed to release carbon dioxide and CH 2 CONH 2 free radical, CH 2 CONH 2 Rapid reaction between free radicals and silicon quantum dots to obtain water-soluble Si-(CH 2 CONH 2 ) n, after continuing to react for 1 hour, transfer the reacted product to a separatory funnel, add an appropriate amount of high-purity water for extraction, and transfer the functionalized water-soluble silicon quantum dots to the water phase. Transfer the aqueous solution of silicon quantum dots to a dialysis bag and dialyze in pure water ...

Embodiment 3

[0034] A method for modifying the surface of silicon quantum dots, comprising the steps of:

[0035] Weigh 3mg of newly prepared silicon quantum dots and place them in a double-necked flask, add 150mg of lauroyl peroxide and 3ml of toluene solution, stir and heat to 120°C under anhydrous and oxygen-free conditions, after 10 minutes, there are a lot of bubbles in the flask overflow, indicating that lauroyl peroxide decomposes to liberate carbon dioxide and .CH 3 (CH 2 ) 10 free radical, CH 3 (CH 2 ) 10 Free radicals react rapidly with Si quantum dots to obtain Si-(CH 3 (CH 2 ) 10 ) n, after continuing to react for 1 hour, wash with a high-speed centrifuge several times, and dry in vacuum to obtain hydrophobic silicon quantum dots.

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Abstract

The invention discloses a surface water-solubility modification method for silicon quantum dots. The method comprises the following steps: firstly, dissolving silicon quantum dots in an organic solvent and then adding superoxide; secondly, heating the above-got solution under a water-free and oxygen-free condition, and purifying to obtain the finished products. The invention has the advantage of simple technical operation, controllable reaction conditions and short reaction time so as to realize a quick modification of a mass of silicon quantum dots.

Description

technical field [0001] The invention relates to a method for surface modification and modification of nanometer materials, in particular to a method for surface modification and modification of silicon quantum dots. Background technique [0002] Silicon quantum dots have the characteristics of adjustable luminescence, high fluorescence quantum efficiency, good photobleaching resistance, good biocompatibility and non-toxicity. Prospects [Nanoscale 2011, 10.1039 / c0nr00559b]. However, as an optoelectronic device material, the surface of silicon quantum dots must be modified with hydrophobic organic functional groups; in the field of biomedicine, the surface of silicon quantum dots must be hydrophilically modified in order to covalently bind to biomolecular DNA, antigens, and antibodies . Therefore, the surface modification of silicon quantum dots is a very important work. At present, the surface modification of silicon quantum dots is mainly divided into two categories: one ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021B82Y40/00
Inventor 葛介超汪鹏飞赵文文刘卫敏张洪艳
Owner 上海氢程科技有限公司
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