Method for synthesizing Si/IIB-VIB group semiconductor nano p-n junction with one-step method

A semiconductor and nanotechnology, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of complex process, poor controllability, low repeatability, etc., and achieve the effect of simple process

Inactive Publication Date: 2013-01-09
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the ubiquitous problems are complex process, low repeatability and poor controllability

Method used

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  • Method for synthesizing Si/IIB-VIB group semiconductor nano p-n junction with one-step method
  • Method for synthesizing Si/IIB-VIB group semiconductor nano p-n junction with one-step method
  • Method for synthesizing Si/IIB-VIB group semiconductor nano p-n junction with one-step method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1. Mix high-purity Sb powder (99.99%) with IIB-VIB group semiconductor ZnSe powder (99.99%) according to an atomic ratio of 8%, and put them into an agate bowl for full grinding.

[0031]2. Weigh 0.5g of mixed ZnSe and Sb powder into a small porcelain boat, and put the small porcelain boat into the center of the horizontal tube furnace. Place a vaporized gold silicon wafer 12cm away from the small porcelain boat downstream of the carrier gas. The thickness of the gold film on the evaporated gold silicon wafer is about 10nm.

[0032] 3. Use a mechanical pump and a molecular pump to pump the background vacuum in the horizontal tube furnace to 10 -3 Pa, feed high-purity argon and hydrogen, and keep the pressure in the furnace at 1.6×10 4 Pa, the flow rate of argon and hydrogen is maintained at 150SCCM.

[0033] 4. After 40 minutes, the temperature of the furnace was programmed to rise to 580°C, and high-purity silane was introduced, and the flow rate of argon-hydrogen g...

Embodiment 2

[0036] High-purity Ga powder (99.99%) is ground and mixed with IIB-VIB group semiconductor CdSe powder (99.99%) in an agate bowl at an atomic ratio of 6%, and the subsequent operations are the same as in Example 1. A Si / CdSe group semiconductor nanometer p-n junction is obtained.

Embodiment 3

[0038] 1. Weigh 1g IIB-VIB semiconductor ZnSe powder into a small porcelain boat, and put the small porcelain boat into the center of the horizontal tube furnace. Place a vaporized gold silicon wafer 12cm away from the small porcelain boat downstream of the carrier gas. The thickness of the gold film on the evaporated gold silicon wafer is about 10nm.

[0039] 2. Use a mechanical pump and a molecular pump to pump the background vacuum in the horizontal tube furnace to 10 -3 Pa, feed high-purity argon-hydrogen gas, and keep the pressure in the furnace at 6×10 3 Pa, the flow rate of argon and hydrogen is maintained at 150SCCM.

[0040] 3. After 40 minutes, the temperature of the furnace was programmed to rise to 600° C., and high-purity silane and phosphine (hydrogen diluted to 10%) were fed in. The silane flow rate was maintained at 50 SCCM, and the phosphine flow rate was 50 SCCM. The air pressure remains constant. After 30 minutes, the temperature continued to rise to 104...

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Abstract

The invention discloses a method for synthesizing a Si / IIB-VIB group semiconductor nano p-n junction with a one-step method. A chemical vapor deposition is performed in a horizontal tube furnace, the IIB-VIB group material is evaporated at 1,000-1,100 DEG C, and silane is introduced in the heat preservation process, or the III or V group gaseous doping element is introduced at the same time; due to the intersolubility between silicon and the IIB-VID group material, the silane generally grows on the surface of the IIB-VID group nano structure to form an IIB-VIB (core)-Si (shell) structure. As the doping element is introduced, the Si (shell) and IIB-VIB (core) have complementary doping types to form a high-quality nano p-n junction, and the growth of the Si / IIB-VIB nano p-n junction can be realized with the one-step method. On the other hand, as Si is effective in suppressing radial growth of a wrapping material and the diameter of the core IIB-VIB nano wire can be limited within 10 nanometers, the method can be used as a method for growing a small-size IIB-VIB nano structure with quantum effect.

Description

1. Technical field [0001] The invention relates to a method for preparing Si / IIB-VIB group semiconductor nanometer p-n junction, in particular to a method for synthesizing Si / IIB-VIB group semiconductor nanometer p-n junction in one step. 2. Background technology [0002] Nano p-n junction is an important material basis for nano optoelectronic devices. Group IIB-VIB quasi-one-dimensional semiconductors, including ZnO, ZnS, ZnSe, ZnTe, and CdS nanowires / ribbons, have excellent properties such as high crystal quality, good transport properties, and high luminous efficiency, and are important for a new generation of nano-optoelectronic devices. material basis. The p-n junction is one of the most basic device structures. The application of IIB-VIB nanostructures in the fields of nanoelectronics and optoelectronics such as light emission, photodetection, and photovoltaic devices is inseparable from the construction and application of nanop-n junctions. At present, there are two...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04C23C16/24C23C16/30C23C16/44
Inventor 揭建胜王莉于永强吴春艳彭强卢敏任勇斌
Owner HEFEI UNIV OF TECH
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