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Amorphous silicon solar cell optimized by modulating energy band structure of intrinsic layer via hydrogen and manufacturing method thereof

An energy band structure, solar cell technology, applied in chemical instruments and methods, circuits, crystal growth, etc., can solve problems such as increased risk and production cost

Inactive Publication Date: 2011-09-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The disadvantage of this method is that it needs to use germane, a highly toxic and expensive gas, which greatly increases the danger and production cost in the production process.

Method used

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  • Amorphous silicon solar cell optimized by modulating energy band structure of intrinsic layer via hydrogen and manufacturing method thereof
  • Amorphous silicon solar cell optimized by modulating energy band structure of intrinsic layer via hydrogen and manufacturing method thereof
  • Amorphous silicon solar cell optimized by modulating energy band structure of intrinsic layer via hydrogen and manufacturing method thereof

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Embodiment Construction

[0026] The equipment used for the growth of the present invention is a plasma-assisted chemical vapor deposition system (PECVD), including reaction chambers (mounting chamber, doping chamber and intrinsic chamber), vacuum system, substrate heating and temperature control system, gas path control system etc. The gas used in the deposition cell is 99.99% high-purity silane and hydrogen produced by a hydrogen generator as a reaction gas, with a purity of 0.5% (dilute gas is hydrogen) of borane and 1% phosphine (dilute gas is hydrogen) as a dopant gas. The frequency of the radio frequency power source for exciting the plasma is 13.56 MHz.

[0027] Please refer to Fig. 1 (a), shown in Fig. 1 (b), the present invention provides a kind of hydrogen modulation intrinsic layer energy band structure optimization amorphous silicon solar cell manufacturing method, comprises the following steps:

[0028] Step 1: clean a substrate 10, put it into a plasma-enhanced chemical vapor deposition...

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Abstract

The invention provides a method for manufacturing an amorphous silicon solar cell optimized by modulating an energy band structure of an intrinsic layer via hydrogen, comprising the following steps: step 1, cleaning a substrate, placing the substrate into a plasma enhanced CVD (chemical vapor deposition) system, and baking and pumping high vacuum; step 2, manufacturing an interlayer on the substrate; and step 3, manufacturing an electrode layer on the interlayer. The method is characterized in that the hydrogen is utilized to modulate the energy band structure of the intrinsic layer (I layer) so as to optimize the light absorption performance and the interface performance of the solar cell, thereby improving the efficiency of the solar cell.

Description

technical field [0001] The present invention relates to the technical field of thin-film solar cells in new energy sources, in particular to a hydrogen-modulated intrinsic layer energy band structure optimization amorphous silicon solar cell and a manufacturing method, which is to modulate the intrinsic layer (I layer) energy band structure by hydrogen Improve the light absorption performance and interface performance of the solar cell, thereby increasing the efficiency of the cell. Background technique [0002] Today's photovoltaic market is mainly composed of crystalline silicon solar cells and amorphous silicon solar cells. The cost of crystalline silicon batteries is relatively high, especially crystalline silicon materials are the pillar materials of the semiconductor industry, so the raw materials are greatly affected by other industries, and it is prone to temporary shortages of crystalline silicon, which greatly restricts the future development of crystalline silicon...

Claims

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Application Information

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IPC IPC(8): H01L31/20C30B25/16H01L31/075
CPCY02E10/50Y02E10/548Y02P70/50
Inventor 彭文博曾湘波刘石勇姚文杰谢小兵肖海波杨萍王超俞育德
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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