Preparation method of nano-gap electrode in micro-nano electromechanical device

Abstract

The invention provides a preparation method of a nano-gap electrode in a micro-nano electromechanical device, which belongs to the field of micro-nano electromechanical systems. According to the preparation method, an appropriate material is selected to prepare a sacrificial layer, and the preparation method comprises the following steps of: firstly, preparing a nano-scale side wall structure of the sacrificial layer in a mode of back etching, wherein the side wall needs to have a certain height; secondly, depositing a layer of thin metal layer or other electrode materials; and thirdly, selectively corroding the side wall material of the sacrificial layer, wherein the metals or other electrode materials attached to the side wall are corroded together, and a gap is formed at the position of the side wall. The nano-gap electrode is prepared by keeping the thickness of the sacrificial layer side wall in a nano scale. The preparation method is compatible with the conventional semiconductor processing technique, is easy for large-scale production, and is low in cost.

Description

technical field [0001] The invention relates to a method for preparing a nano-gap electrode in a micro-nano electromechanical device, belonging to the field of micro-nano electromechanical systems. Background technique [0002] With the reduction of the feature size of silicon devices, the demand for the fabrication process of micro-nano structures is increasing. Nanogap electrodes are a fundamental part of MEMS devices. Nanogap electrodes have important applications in detecting the properties of nanoscale materials, as well as constructing quantum devices and biosensors. [0003] The process methods for manufacturing nano-gap electrodes include electron beam etching method, atomic force microscope nano-etching method, contact fracture method and electroplating method. Among them, (1) the electron beam has a shorter wavelength than ordinary light, and it can obtain higher resolution due to the use of electric field to focus precisely, and can write directly under the cont...

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Problems solved by technology

Among them, (1) the electron beam has a shorter wavelength than ordinary light, and can obtain higher resolution due to the use of electric field to focus precisely, and can write directly under the control of the computer, but the efficiency is low and the price is expensive, and The proximity effect caused by the incident electron beam makes it difficult to apply on a large scale; (2) the advantage of the contact fracture method is that the method is simple, and electrodes with small gaps can be prepared, but it is not easy to mass-produce; The technology prepares metal electrodes with a gap of micron scale, and then deposits them in the electroplating solution, and the metal in the electroplating solution is reduced and deposited on the electrode surface. This method is simple and efficient, but it can only be operated one by one for specific devices. ; (4) Electron migration method is low in cost, but the shape of the prepared electrode is irregular, the preparation process is difficult to control, and it is difficult to carry out large-scale manufacturing

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