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Method for preparing indium-enriched CuInSe2 membrane by adjusting pH value and electrodepositing

A technology of electrodeposition and thin film, which is applied in the field of new energy sources of optoelectronic materials, can solve problems such as being unable to get rid of high vacuum conditions, and achieve the effect of reducing cost, low cost, and smooth and dense surface

Inactive Publication Date: 2011-09-14
HENAN UNIVERSITY
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Problems solved by technology

In addition, CuInSe was prepared by electrodeposition in the past 2 In the process of thin film, the indium and selenium element layers with a thickness of tens to hundreds of nanometers are deposited by vacuum sputtering in the subsequent process to improve the ratio of copper and indium to improve the efficiency of thin film batteries, but these methods cannot be separated from the harsh high vacuum conditions

Method used

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  • Method for preparing indium-enriched CuInSe2 membrane by adjusting pH value and electrodepositing
  • Method for preparing indium-enriched CuInSe2 membrane by adjusting pH value and electrodepositing
  • Method for preparing indium-enriched CuInSe2 membrane by adjusting pH value and electrodepositing

Examples

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Embodiment 1

[0021] A preparation of indium-rich CuInSe by adjusting the pH value electrodeposition 2 The method of thin film, this method is: in the electrolyte solution that contains copper, indium, selenium ion (electrolyte solution composition is 6.48mmol / L CuSO 4 、50mmol / L In 2 (SO4) 3 , 20mmol / L H 2 SeO 3 , 0.5mol / L KCl and 0.5mol / L sodium citrate, deionized water is used when preparing the electrolyte); at room temperature, the pH value of the electrolyte is adjusted to 2.0 with 10% sulfuric acid by mass percentage, and then the cathode substrate Copper indium selenium prefabricated film was prepared by constant potential electrodeposition (electrodeposition adopts three-electrode electrodeposition system, using Pt mesh as counter electrode (anode), saturated calomel electrode as reference electrode, ITO conductive glass as working electrode (cathode) ), the deposition potential is -0.6 V, and the deposition time is 30 minutes). After drying, the prefabricated film is placed in ...

Embodiment 2

[0023] The pH value of the electrolyte was changed from 2.0 to 1.7, and other preparation conditions were the same as in Example 1. The surface of the prepared copper indium selenide thin film is smooth and dense (see figure 1 In b), Cu / In=0.97, Se / (Cu+In) =0.85, see specific performance figure 2 and image 3 .

Embodiment 3

[0025] The pH value of the electrolyte was changed from 2.0 to 1.5, and other preparation conditions were the same as in Example 1. The smoothness of the copper indium selenium thin film that makes is compared with embodiment 1 and embodiment 2 slightly worse (see figure 1 Middle c), Cu / In=1.03, Se / (Cu+In) =0.82, see specific performance figure 2 and image 3 .

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Abstract

The invention relates a method for preparing an indium-enriched CuInSe2 membrane by adjusting a pH value and electrodepositing. The method comprises the following steps of: at room temperature, adjusting the pH value of electrolyte containing copper, indium and selenium ions to be 1.0-2.5; performing electrodeposit on the cathode base to prepare a copper-indium-selenium prefabricated membrane; and drying, and annealing the prefabricated membrane in vacuum with a solid-state selenium source or the atmosphere of inert gases to prepare the copper-indium-selenium membrane. The method has the advantages of mild conditions, simple operation and low cost. The membrane prepared by the method has good photoelectric properties.

Description

technical field [0001] The invention belongs to the field of new energy sources of optoelectronic materials, and in particular relates to a method of preparing indium-rich CuInSe by adjusting pH value electrodeposition 2 Thin film method, using this method to prepare indium-rich CuInSe 2 The thin film has good photoelectric properties. Background technique [0002] CuInSe 2 It is a ternary Ⅰ-Ⅲ-Ⅵ group compound, a direct bandgap semiconductor material with up to 10 5 cm -1 The absorption coefficient in the visible light region, the material is suitable for the development of thin film solar cells. In addition, it has strong radiation resistance, low manufacturing cost and stable battery performance, so CuInSe 2 Thin-film solar cells have attracted more and more attention. [0003] CuInSe 2 The preparation methods of absorbing layer materials for thin-film solar cells are ternary co-evaporation method, sputtering method and electrodeposition method. The application o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/00C25D5/50
Inventor 杜祖亮王信春王广君张兴堂
Owner HENAN UNIVERSITY
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