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Anti-static device

An anti-static and device technology, applied in the direction of electric solid devices, electrical components, piezoelectric devices/electrostrictive devices, etc., can solve the problems of not being able to withstand high temperature, pollution, restricting product promotion, etc. Improve thixotropy and reduce leakage

Inactive Publication Date: 2011-09-14
SEMITEL ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Since the PESD material is composed of a polymer base, it cannot withstand high temperatures and is easily contaminated by processing
Therefore, the processing cost of PESD components is relatively expensive, and it is difficult to realize low-cost mass production of zinc oxide varistors, which greatly limits the promotion of products

Method used

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Embodiment 1～5

[0059] Embodiments 1 to 5: a kind of antistatic device, such as the attached Figure 1-3 , the antistatic device is provided with a substrate 2 printed with a first metal layer 1 and a second metal layer 3 encapsulated by a protective layer, and a micro gap 4 is left between the substrate 2 of the first metal layer 1 and the second metal layer 3 , the micro-gap 4 is coated with a pressure-sensitive material layer 5, and the first metal layer 1 and the second metal layer 3 are connected through the pressure-sensitive material layer 5; the protective layer is an epoxy layer or a glass layer; The pressure-sensitive material layer 5 is prepared by the following process: including the following steps:

[0060] Step 1. Prepare the glass-coated raw material. The formula of the glass-coated raw material is mainly composed of the following materials in percentage by mass, as shown in Table 1:

[0061] Table 1

[0062]

calcium isopropoxide

Tributyl borate

Aluminu...

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Abstract

The invention provides an anti-static device which is provided with a base plate and a second metal layer, wherein the base plate is packaged by a protection layer and printed with a first metal layer, and a microgap is reserved between the base plate of the first metal layer and the second metal layer and coated with a pressure-sensitive material layer. The pressure-sensitive material layer is prepared through the following steps: preparing a glass coating material consisting of calcium isopropoxide, tributyl borate, aluminum ethoxide and tetra-ethyl orthosilicate; adding ethyl cellulose, castor seed oil and surfactant into terpinol to obtain a terpinol carrier; mixing the glass coating raw material with the terpinol carrier; and putting semiconducting zinc oxide particles and aluminum powder particles as well as inorganic non-conductive phase in a plaster carrier, wherein the inorganic non-conductive phase is any one or mixture of Al2O3, SiO2, CaO and MgO. The anti-static device has strong static-resistant impact capability and can reduce leaked current at normal working state to be under 1 microampere.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to an antistatic device. Background technique [0002] Varistor ceramics refer to semiconductor ceramics whose resistance value has a significant nonlinear relationship with the applied voltage. The resistance value of the varistor made in this way can be switched back and forth between the linear high-resistance state and the approximately conduction low-resistance state with the rise and fall of the external field voltage. It is a typical "smart" electronic component. Varistors are usually connected in parallel with the protected circuit or electronic components. When there is an overload in the circuit, the varistor can automatically bypass the overload, thereby preventing the circuit or components from being damaged. [0003] Zinc oxide varistor is a polycrystalline ceramic material with ZnO as the main body, added with various metal oxides (Bi2O3, MnO2, Co2O3, Cr2O3, Sb2O3, etc.), and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L41/08H01L41/18H01L41/22C09D1/00C09D7/12H10N30/00H10N30/01H10N30/85
Inventor 仇利民吴长和杨涛
Owner SEMITEL ELECTRONICS
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