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AlN/GaN/freestanding diamond structured surface acoustic wave (SAW) device and preparation method thereof

A diamond and diamond thick film technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of no piezoelectricity, inability to excite and receive surface waves, etc., and achieve good crystallinity, high electromechanical coupling coefficient, and low loss. Effect

Inactive Publication Date: 2011-09-14
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, diamond is not a piezoelectric material, and it does not have piezoelectricity itself, so it cannot excite and receive surface waves. It is necessary to deposit a layer of piezoelectric film on its surface to make a multilayer thin film SAW filter.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0023] 1. The free-standing diamond thick film substrate is a self-sustaining diamond thick film with a thickness of 0.2-0.8 mm prepared on a metal molybdenum (Mo) substrate by hot cathode DC glow discharge plasma chemical vapor deposition (HC-PCVD) . The so-called self-sustaining diamond thick film is a free-standing diamond thick film. After the growth is completed, the Mo substrate is peeled off by chemical and physical experimental methods, and then the free-standing diamond thick film is formed. Since the growth surface of the diamond thick film is relatively rough, it is not conducive to the application of SAW devices, so it needs to be mechanically polished. Since the hardness of diamond is the highest in nature, it is extremely difficult to polish it mechanically. The most commonly used method is to perform a complete mechanical polishing of the diamond thick film growth surface, but this method is extremely labor-intensive and time-consuming. The invention selects t...

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Abstract

The invention discloses an AlN / GaN / freestanding diamond structured surface acoustic wave (SAW) device and a preparation method thereof. In the multi-layer film structure SAW device, a nano GaN middle layer preferably oriented by a high-quality C shaft is arranged between a freestanding diamond thick film substrate and an AlN thin film. In the AlN / GaN / freestanding diamond structured SAW device and the preparation method thereof, the nano GaN middle layer preferably oriented by the high-quality C shaft is deposited on the surface of the freestanding diamond thick film substrate at first, and the AlN thin film preferably oriented by the high-quality C shaft is deposited on the nano GaN middle layer then. The invention has the advantages that: by adoption of the nano GaN middle layer preferably oriented by the high-quality C shaft serving as a middle layer between the freestanding diamond and the AlN thin film, the flat, smooth, high crystallinity and high-quality AlN thin film preferably oriented by the high-quality C shaft can be obtained. The structure of the thin film meets the application requirements in the fields of high frequency, high mechanical coupling factor, low loss and high power SAW devices.

Description

technical field [0001] The invention relates to the field of surface acoustic wave devices (SAW), in particular to an AlN / GaN / self-supporting diamond structure SAW device and a preparation method. Background technique [0002] Surface acoustic wave device (SAW) is a frequency-selective device prepared by utilizing the surface acoustic wave effect and resonance characteristics, and is the most widely used SAW device. Its function is to allow the signal of a certain frequency band to pass through, while preventing the signal of other frequency band from passing through. The center frequency f of the SAW filter made with an interdigital transducer (IDT) is determined by the surface acoustic wave propagation velocity V of the material and the period L of the IDT electrode, that is, f=V / L. [0003] Regardless of the development of SAW technology itself or the application requirements of SAW filters, SAW filters are developing in the direction of high frequency and high performan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/25H03H3/02
Inventor 秦福文白亦真张东吴爱民边继明
Owner DALIAN UNIV OF TECH
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