Making method of semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device manufacturing process, can solve problems such as affecting the long-term reliability of the device, reducing the yield rate, unable to make circuit patterns on the surface of the wafer, etc., to achieve the effect of improving long-term reliability and yield rate
Active Publication Date: 2011-09-21
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
Furthermore, due to the influence of the depth of focus of the lithography machine in lithography, it is impossible to make circuit patterns on the wafer surface
In addition, the uneven surface of the wafer will also affect the long-term reliability of the device and reduce the yield
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[0024] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0025] In order to thoroughly understand the present invention, detailed steps will be presented in the following description to illustrate how the present invention removes the residues on the device surface after contact hole / via etching. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.
[0026] In order to ov...
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The invention discloses a making method of a semiconductor device, which comprises the steps of: a, sequentially forming a stop layer, a high-stress cover layer, a first dielectric layer, a second dielectric layer, a silicon-containing bottom anti-reflection coating and a photoetching glue layer with patterns on a front-end device layer; b, etching the silicon-containing bottom anti-reflection coating and the second dielectric layer by using the photoetching glue layer as a mask, exposing the upper surface of the first dielectric layer; c, carrying out dry-process etching on the first dielectric layer and the high-stress cover layer by using the silicon-containing bottom anti-reflection coating and the second dielectric layer as masks, and stopping at the stop layer; d, introducing reaction gases including fluorohydrocarbon gas and oxygen for removing silicon-containing residues; and e, stripping the second dielectric layer to form the semiconductor device. According to the method disclosed by the invention, the residues on the surface of the device subjected to contact hole or through hole etching can be effectively removed so that the surface of a wafer becomes flat, long-term reliability of the device is improved, and yield of the device is increased.
Description
technical field [0001] The invention relates to a semiconductor device manufacturing process, in particular to a method for removing residues covered on the surface of a semiconductor device after etching. Background technique [0002] As the line width of integrated circuits continues to shrink, the miniaturization of semiconductor elements has entered the deep submicron and nanometer levels, and the greater the density of semiconductor elements on a single chip, the smaller the spacing between elements, which makes The fabrication of contact holes and vias is becoming more and more difficult. Especially when the line width of semiconductor devices reaches 65nm node or even smaller technology nodes, it is increasingly difficult to fabricate openings such as contact holes, via holes and trenches, especially openings with high aspect ratios. [0003] For openings with high aspect ratios, in order to increase the photoresist’s margin of focus depth (depth of focus, DOF), it i...
Claims
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Login to View More IPC IPC(8): H01L21/768H01L23/522
Inventor 孙武王新鹏
Owner SEMICON MFG INT (SHANGHAI) CORP