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N-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and manufacturing method thereof

A technology of vertical cavity surface emission and lasers, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of low output power of devices, no preparation of controllable resonators, and poor laser directionality, etc., to improve output power , reduce the threshold current, and expand the application range

Inactive Publication Date: 2011-09-21
DALIAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, since this laser device does not prepare a controllable resonator, its lasing is generally caused by the random scattering resonator or the microcavity mode selection effect of ZnO nanocrystals, so the output power of the device is very low, and the directionality of the laser is very low. not good too

Method used

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  • N-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and manufacturing method thereof
  • N-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and manufacturing method thereof
  • N-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and manufacturing method thereof

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Embodiment 1

[0033] ZnO-based vertical-cavity surface-emitting laser with upper current confinement window structure n-type ZnO and p-type GaN combination. The ZnO-based vertical cavity surface-emitting laser structure with upper current confinement window structure n-type ZnO and p-type GaN is shown in the appendix image 3 , the preparation method is characterized in that all epitaxial layers of the device are prepared by MOCVD method, with Al 2 o 3 substrate as an example, using the current mature conventional MOCVD preparation method on Al 2 o 3 A multi-layer AlGaN / GaN thin film DBR lower reflector 8 is grown on the substrate, and the central wavelength of its reflection is controlled to be the designed laser lasing wavelength λ, and its reflectivity can be 30% to 99.99%, and then a p-type GaN epitaxial layer 2 is grown, The thickness of the layer is controlled to be one-half λ of N, and N is an odd number, and then the MOCVD method is used, especially the ZnO thin film special-purp...

Embodiment 2

[0035] ZnO-based vertical cavity surface emitting laser combined with n-type ZnO and p-type GaN with internal current confinement window structure. The structure of ZnO-based vertical cavity surface emitting laser combined with n-type ZnO and p-type GaN with internal current confinement window structure is shown in the appendix Figure 4 , the preparation method is characterized in that a silicon dioxide current isolation layer 10 with a thickness of 20-500 nanometers is evaporated on the p-type GaN epitaxial layer 2 with an electron beam evaporation table, and the current limiting window 11 is etched by photolithography, and then Prepare MgO current lower confinement layer 3, n-type ZnO light-emitting layer 4 and MgZnO current upper confinement layer 7 by MOCVD method, the preparation method and thickness requirements are the same as in Example 1; the rest of the epitaxial layers, electrodes and multi-layer dielectric film DBR upper reflector The preparation of 9 is also the ...

Embodiment 3

[0037] Ion implantation bombardment ZnO-based vertical-cavity surface-emitting laser with a current-confined window structure combining n-type ZnO and p-type GaN. The structure of ZnO-based vertical cavity surface-emitting laser combined with n-type ZnO and p-type GaN in this ion implantation bombardment current-limited window structure is shown in the appendix Figure 5 , the preparation method is characterized in that a layer of high-resistance current isolation layer 13 is prepared in the ZnO-based material light-emitting layer 4 by ion implantation bombardment method to form a current confinement window 11; the preparation process is briefly described as follows, on the substrate with The MOCVD method sequentially grows the long multilayer AlGaN / GaN thin film DBR lower mirror 8, the p-type GaN epitaxial layer 2, the current lower confinement layer 3, the n-type ZnO-based material light-emitting layer 4 and the current upper confinement layer 7, and adopts our invented The ...

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Abstract

The invention relates to an n-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser and a manufacturing method thereof, and belongs to the technical field of semiconductor light emitting devices and manufacturing methods thereof. The laser consists of a substrate 1, a p-type GaN epitaxial layer 2, a current lower limitation layer 3 and a lower electrode 5 which are prepared on the epitaxial layer 2 and independent of each other, an n-type ZnO-base material light emitting layer 4 prepared on the current lower limitation layer 3, an upper electrode 6 and the like, andis characterized in that: a multi-layer AlGaN / GaN thin film distributed bragg reflector (DBR) lower reflector 8 is grown and prepared between the substrate 1 and the p-type GaN epitaxial layer 2; an n-type broadband gap ZnO-base ternary system material current upper limitation layer 7 is prepared on the n-type ZnO-base material light emitting layer 4; and the upper electrode 6 and a multi-layer medium thin film DBR upper reflector 9 which are independent of each other are prepared on the current upper limitation layer 7. The n-type ZnO and p-type GaN combined ZnO-base vertical cavity surface emitting laser has the advantages that: due to a controllable resonant cavity, the output power of the device can be enhanced; the direction of laser becomes better; and the application range of the device is expanded.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices and preparation methods thereof, in particular to a laser device structure based on ZnO-based materials and a preparation method thereof. Background technique [0002] GaN-based materials have been widely used in the field of solid-state lighting and information. The energy band gap and lattice constant of ZnO and GaN are very close, and they have similar photoelectric properties. However, compared with GaN, ZnO has a higher melting point and exciton binding energy, higher exciton gain, lower epitaxial growth temperature, lower cost, and easy etching, which makes the subsequent processing of epitaxial wafers easier and makes the device Preparation is more convenient and so on. Therefore, the successful development of ZnO-based light-emitting tubes and lasers may replace or partially replace GaN-based optoelectronic devices, and will have greater application prospects...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/06
Inventor 杜国同梁红伟夏晓川赵旺
Owner DALIAN UNIV OF TECH
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