Solution for surface metallization pretreatment of semiconductor P/N type refrigerating sheet and application method of same

A surface metal and semiconductor technology, applied in the manufacturing/processing of semiconductor devices, thermoelectric devices, metal material coating process, etc., can solve problems such as failure to obtain good results, and reduce sandblasting and nickel blasting steps and process consumption. The effect of reducing the energy and enhancing the binding force

Inactive Publication Date: 2011-09-28
王艺臻
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, although there are also literature (Jiang Yusi, Gao Yuan. Application of surface technology in semiconductor refrigeration devices. Guangdong Nonferrous Metals Society. 15, 46 (2005).; Chen Liangjie. Research on direct nickel plating of semiconductor refrigeration crystals. Electroplating and environmental protection. 23 ,15(2003).) studied the mixed acid system, but failed to obtain good results

Method used

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  • Solution for surface metallization pretreatment of semiconductor P/N type refrigerating sheet and application method of same
  • Solution for surface metallization pretreatment of semiconductor P/N type refrigerating sheet and application method of same
  • Solution for surface metallization pretreatment of semiconductor P/N type refrigerating sheet and application method of same

Examples

Experimental program
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Effect test

Embodiment 1

[0023] In a wafer (P-type or N-type) with a diameter of 2.7 cm and a thickness of 0.15 cm, after degreasing and washing with water, immerse in 8% (volume) hydrochloric acid, 5% (volume) nitric acid and 3g / L surfactant (especially Sodium dodecyl sulfonate or potassium dodecyl sulfonate), the rest is water, after 30 seconds to 100 minutes of treatment at a temperature of 12~36°C, take it out and wash it to get a smaller roughness, a more uniform surface, and a rougher surface. For after reducing 10~40% before using the technique of the present invention, can change over to metallization techniques such as electroplating nickel or sputtering ( figure 1 ).

Embodiment 2

[0025] In a wafer (P-type or N-type) with a diameter of 2.7 cm and a thickness of 0.15 cm, after degreasing and washing with water, immerse in 28% (volume) hydrochloric acid, 30% (volume) nitric acid and 15g / L surfactant (especially sodium dodecylsulfonate or potassium dodecylsulfonate), and the rest is water, which is treated at a temperature of 12~36°C for 30 seconds to 100 minutes, then taken out and washed to obtain a smaller roughness, a more uniform surface, and a rougher surface. For after reducing 10~40% before using the technique of the present invention, can change over to metallization techniques such as electroplating nickel or sputtering ( figure 2 ).

Embodiment 3

[0027] In a wafer (P-type or N-type) with a diameter of 2.54 cm and a thickness of 0.15 cm, after degreasing and washing with water, immerse in 10% (volume) hydrochloric acid, 18% (volume) nitric acid and 10g / L surfactant (especially Sodium dodecyl sulfonate or potassium dodecyl sulfonate), the rest is water, after 30 seconds to 100 minutes of treatment at a temperature of 12~36°C, take it out and wash it to get a smaller roughness, a more uniform surface, and a rougher surface. For after reducing 10~40% before using the technique of the present invention, can change over to metallization techniques such as electroplating nickel or sputtering ( image 3 ).

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Abstract

The invention discloses a solution for the surface metallization pretreatment of a semiconductor P / N type refrigerating sheet and an application method of the same. In the invention, the solution consists of the following components in percentage by volume: 5-52% of hydrochloric acid, 5-36% of nitric acid, 0-28g / L of surfactant and the remaining of water. As the surface metallization pretreatment is performed on the semiconductor P / N type refrigerating sheet by using the solution disclosed by the invention, the rejection rate of the semiconductor P / N type refrigerating sheet can be reduced, the application of a metal nickel material is reduced, and the technical process of the surface metallization pretreatment can also be shortened to reduce the production cost; and moreover, the bonding force of a base material and a metallized layer can be increased, and the temperature difference and performances of the refrigerating sheet can be improved.

Description

technical field [0001] The invention relates to the technical field of metallization of materials, in particular to the technical field of metallization of semiconductor refrigeration materials. Background technique [0002] The metallization process of the P / N type material used in the semiconductor refrigeration sheet is usually a physical treatment method (Frederick A. Lowenheim. Translated by the 103 Teaching and Research Office of Beijing Aeronautical Academy. Modern Electroplating [M] . Beijing: Mechanical Industry Press, 1982.; Wang Li, Yu Xiufa, Liu Xinhong. Research on surface treatment process of thermoelectric material sheets. Power Technology. 26, 441 (2002).; Gu Xiaojie. Master's degree thesis of Harbin Institute of Technology. 2003), that is to The surface of the semiconductor material is treated with the process of nickel spraying after sandblasting or the method of nickel spraying after cleaning to improve the bonding force of the coating, but the high temper...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34C25D7/12C23C14/02
Inventor 王艺臻
Owner 王艺臻
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