Unlock instant, AI-driven research and patent intelligence for your innovation.

Groove metal oxide semiconductor field effect tube (MOSFET) and manufacturing method thereof

A technology of oxide semiconductors and field effect transistors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of source area doping concentration decrease, and achieve the reduction of source contact resistance, The effect of preventing growth and increasing the contact area

Active Publication Date: 2011-10-12
FORCE MOS TECH CO LTD
View PDF4 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention overcomes some shortcomings in the prior art, provides an improved trench MOSFET structure and process manufacturing method, enhances the avalanche breakdown characteristics of the device, and solves the problem caused by the ionization of the dopant in the body contact region. The problem of the decrease of doping concentration in the source region caused by implantation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Groove metal oxide semiconductor field effect tube (MOSFET) and manufacturing method thereof
  • Groove metal oxide semiconductor field effect tube (MOSFET) and manufacturing method thereof
  • Groove metal oxide semiconductor field effect tube (MOSFET) and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058] The invention is explained in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The invention can, however, be embodied in different ways and should not be limited to the embodiments described herein. For example, the description here refers more to N-channel trench MOSFETs, but clearly other devices are possible.

[0059] refer to Figure 4 A preferred embodiment of the invention is shown. The trench MOSFET according to this preferred embodiment is formed on an N+ doped substrate 100, and a drain metal 122, preferably Ti / Ni / Ag, is deposited on the lower surface of the substrate. The N-type epitaxial layer 102 is formed on the upper surface of the substrate 100 and has a lower majority carrier concentration than the substrate. A plurality of trenches 110 a located in the active region are formed in the epitaxial layer 100 , the inner surface of which is lined with a first insulating layer 108 , s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a groove MOSFET (Metal Oxide Semiconductor Field Effect Tube) and a manufacturing method thereof. By adopting the structure, the contact areas between the bottoms and the side walls of a body contact region and a source body contact region are increased, and the avalanche breakdown characteristic of a device is enhanced. Moreover, electric contact with a source metal is realized with a wider metal jack plug, so that the contact resistance is reduced.

Description

technical field [0001] The invention relates to a unit structure, a device structure and a manufacturing process of a semiconductor power device. In particular, it relates to a novel trench MOSFET (trench metal oxide semiconductor field effect transistor) unit structure and process method, and the trench MOSFET adopting the structure effectively improves the avalanche breakdown characteristic of the device. Background technique [0002] U.S. Patent No. 6,888,196 discloses a trench metal oxide semiconductor field effect transistor (MOSFET) using a conventional source-body contact trench structure, such as figure 1 shown. The trench MOSFET includes: an N-type doped epitaxial layer 902 formed above the N+ substrate 900; a plurality of trenches 910a inside the epitaxial layer 902; a gate oxide layer lining the inner surface of the trenches 910a 908 and polysilicon 910 filled with grooves above it; P-type body region 912 and n+ source region 914 close to the upper surface of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/06H01L23/528H01L21/336H01L21/768
CPCH01L2924/0002
Inventor 谢福渊
Owner FORCE MOS TECH CO LTD