Back contact heterojunction solar battery based on P-type silicon slice

A solar cell and heterojunction technology, applied in the field of solar cells, can solve problems such as increasing the density of carrier recombination defects, affecting the collection and transmission of photogenerated current, and affecting the conversion efficiency of solar cells, so as to simplify the appearance requirements of the welding process and save energy. Production time, the effect of improving conversion efficiency

Active Publication Date: 2011-10-12
山东力诺太阳能电力股份有限公司
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Problems solved by technology

[0004] The solar cells with the above-mentioned HIT structure have the following problems: the first amorphous silicon film has many defects, which increases the carrier recombination defect density in the film body

Method used

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  • Back contact heterojunction solar battery based on P-type silicon slice
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  • Back contact heterojunction solar battery based on P-type silicon slice

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Embodiment 1

[0029]The P-type crystalline silicon 4 is selected from a P-type single crystal silicon wafer, and the surface of the P-type crystalline silicon 4 is pre-cleaned and surface textured by using a semiconductor cleaning process. The thickness of the P-type crystalline silicon 4 used is 200um, the resistivity is 0.5~3Ω.cm, the silicon dioxide layer on the surface of the silicon wafer is removed with 1~5% hydrofluoric acid, and the concentration is less than 3% NaOH and IPA (isopropyl Alcohol) in the mixed solution at about 80°C to prepare pyramid-shaped suede. Increase the absorption of sunlight, increase the area of ​​the PN junction, and increase the short-circuit current. The subsequent P-type crystalline silicon 4 is cleaned by an acid cleaning process and dried. Put the P-type crystalline silicon 4 after texturing into a diffusion furnace and use borane to perform single-sided re-diffusion at about 850°C, forming a layer of P on the lower surface of the P-type crystalline si...

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Abstract

The invention relates to a solar battery, in particular to a back contact heterojunction solar battery based on a P-type silicon slice. According to a back face feature, the back contact heterojunction solar battery is divided into an N-type region and a P-type region, wherein the N-type region forms a P+a-si/i-a-si/P-c-si/P+c-si/i-a-si/N-a-si heterojunction structure; and the P-type region formsa P+a-si/i-a-si/P-c-si/P+c-si heterojunction structure. The solar battery has higher spectral response; sunshine has a longer light transmission route in the battery; the thickness of the solar battery is greatly reduced compared with that of the conventional crystal silicon solar battery; electrodes are all printed on the back face of the battery, so the problem that the front electrode of the conventional solar battery blocks light is solved; therefore, short-circuit current of the solar battery is increased and the conversion efficiency of the solar battery is improved greatly; and by a low-temperature sintering process, a production process is simplified greatly and production cost is reduced; and the solar battery is applicable to industrialized production.

Description

technical field [0001] The invention relates to a solar cell, in particular to a back contact heterojunction solar cell based on a P-type silicon wafer. Background technique [0002] In the 21st century, energy crisis and environmental pollution have become global problems that need to be solved urgently. The development of green energy has become the main method to solve the crisis. Among them, solar cells have become the goal of competing development of countries all over the world because of their cleanliness, safety and renewability. At present, the main development direction of solar cells is to reduce costs and increase efficiency. [0003] The heterojunction solar cell composed of new amorphous silicon and crystalline silicon has a simple structure and simple process. It combines the advantages of high carrier mobility of crystalline silicon with the advantages of low-temperature chemical vapor deposition of amorphous silicon technology, and has become the leading s...

Claims

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Application Information

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IPC IPC(8): H01L31/072H01L31/0352H01L31/0224
CPCH01L31/022441H01L31/0747Y02E10/50
Inventor 张黎明李玉花刘鹏姜言森杨青天高岩徐振华张春艳王兆光程亮任现坤
Owner 山东力诺太阳能电力股份有限公司
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