Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Back contact heterojunction solar battery based on P-type silicon slice

A solar cell and heterojunction technology, applied in the field of solar cells, can solve problems such as increasing the density of carrier recombination defects, affecting the collection and transmission of photogenerated current, and affecting the conversion efficiency of solar cells, so as to simplify the appearance requirements of the welding process and save energy. Production time, the effect of improving conversion efficiency

Active Publication Date: 2013-07-24
山东力诺太阳能电力股份有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The solar cells with the above-mentioned HIT structure have the following problems: the first amorphous silicon film has many defects, which increases the carrier recombination defect density in the film body and affects the collection and transmission of photo-generated current; The light-receiving area is reduced, thereby reducing the short-circuit current and affecting the final conversion efficiency of the solar cell

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back contact heterojunction solar battery based on P-type silicon slice
  • Back contact heterojunction solar battery based on P-type silicon slice
  • Back contact heterojunction solar battery based on P-type silicon slice

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Using the plasma enhanced chemical vapor deposition (PECVD) process, a layer of intrinsic amorphous silicon film 3 is deposited on the upper and lower surfaces of the crystalline silicon after diffusion at 250°C, with a thickness of about 5nm, which has a passivation effect. Deposit a high-concentration P+ a-Si amorphous silicon film 2 on the upper surface of crystalline silicon with a thickness of 5-10nm; deposit a thin layer of N-a-si amorphous silicon 6 on the back surface with a thickness of 5-10nm; at 400°C Next, use PECVD to grow silicon nitride light-receiving surface anti-reflection film 1 on the front surface of the silicon wafer, with a thickness of 85nm and a refractive index of 2.05; its function reduces the reflection loss on the surface of the battery, and the light reflection loss of the solar battery after coating can be reduced to 4 % within; at the same time, effectively passivate the surface and volume of the battery, reduce the recombination center, i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a solar cell, in particular to a back contact heterojunction solar cell based on a P-type silicon chip. From the back features, it is divided into N-type region and P-type region. The N-type region forms a P+a-si / i-a-si / P-c-si / P+c-si / i-a-si / N-a-si heterojunction structure, P The P+a-si / i-a-si / P-c-si / P+c-si heterojunction structure is formed in the type region, which has better spectral response, and the sunlight travels in the battery with a longer optical path, and the battery is compared with conventional crystalline silicon The thickness of the solar cell is greatly reduced; the electrodes are all printed on the back of the cell, which avoids the problem of shading the front electrode of the conventional solar cell, improves the short-circuit current of the solar cell, and thus greatly improves the conversion efficiency of the solar cell. The low-temperature sintering process greatly simplifies the production process. The production cost is reduced, and it is suitable for industrialized production.

Description

technical field [0001] The invention relates to a solar cell, in particular to a back contact heterojunction solar cell based on a P-type silicon wafer. Background technique [0002] In the 21st century, energy crisis and environmental pollution have become global problems that need to be solved urgently. The development of green energy has become the main method to solve the crisis. Among them, solar cells have become the goal of competing development of countries all over the world because of their cleanliness, safety and renewability. At present, the main development direction of solar cells is to reduce costs and increase efficiency. [0003] The heterojunction solar cell composed of new amorphous silicon and crystalline silicon has a simple structure and simple process. It combines the advantages of high carrier mobility of crystalline silicon with the advantages of low-temperature chemical vapor deposition of amorphous silicon technology, and has become the leading s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0747H01L31/0352H01L31/0224
CPCH01L31/022441H01L31/0747Y02E10/50
Inventor 张黎明李玉花刘鹏姜言森杨青天高岩徐振华张春艳王兆光程亮任现坤
Owner 山东力诺太阳能电力股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products