Schottky device with groove structure

A Schottky contact and trench technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing device current density, decreasing forward conduction current, and not improving forward characteristics of devices. It is easy to realize and improve the effect of forward conduction current

Inactive Publication Date: 2011-10-19
HARBIN ENG UNIV
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  • Abstract
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Problems solved by technology

However, the forward characteristics of the device have not been improved very well. On the contrary, due to the existence of the P-ty

Method used

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  • Schottky device with groove structure
  • Schottky device with groove structure
  • Schottky device with groove structure

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Example Embodiment

[0014] Hereinafter, the present invention will be described in more detail with examples in conjunction with the accompanying drawings:

[0015] Reference figure 1 , The trench structure Schottky device of the present invention. It includes an anode electrode 1, a silicon dioxide layer 2, a P+ guard ring 3, a Schottky contact 4, a P-type doped region 5, an N-type drift region 6, an N+ substrate region 7, and a cathode electrode 8. According to the specific conduction characteristics and breakdown characteristics of the device, determine figure 1 The doping concentration and two-dimensional size of the middle drift region 6 and the two-dimensional size of the silicon dioxide layer 2. Adjust the ratio of the Schottky metal to the P-type doped region in the trench, as well as the trench spacing and depth according to the requirement of increasing forward conduction current.

[0016] Reference image 3 From the comparison of the breakdown voltage characteristics of the trench struct...

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Abstract

The invention provides a Schottky device with a groove structure, comprising an anode electrode (1), a silicon dioxide layer (2), a P+ protection ring (3), a Schottky contact part (4), a P-type doping region (5), an N-type drift region (6), an N+ substrate region (7) and a cathode electrode (8); the groove structure is etched in the N-type drift region (6); the P-type doping region (5) is firstly formed in a groove; and then Schottky Metal sputtering is performed so as to form the Schottky contact part in the groove. The groove is etched in a drift region in an ordinary SBD structure to firstly form the P-type doping region, and then Schottky metal and the N-type drift region are sputtered to form the Schottky contact. Without sacrificing the reverse characteristic of the device, the forward conducting current of the Schottky device is improved. The implementing technique and the junction barrier control the JBS technique of a Schottky diode to be compatible, thus being easy to realize, and the requirements of a modern electronic system can be met better.

Description

technical field [0001] The invention relates to an electronic component, in particular to a Schottky device with a trench structure. Background technique [0002] Schottky barrier diodes (Schottky Barrier diodes) are devices that use the contact barrier between metals and semiconductors to work. They are suitable for high-frequency rectification, detection and mixing in low-voltage and high-current output applications, and in high-speed logic circuits. used as a clamp. For Schottky devices, we need small turn-on voltage, large turn-on current, low reverse leakage, and high breakdown voltage. Silicon material has become the most important semiconductor material due to its excellent physical properties, mature planar technology and low cost. However, the withstand voltage of Si-based SBD produced by traditional technology is generally not high, around 40V, and the reverse leakage current is relatively large. And if you need to reduce the reverse leakage current and increase...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/872H01L29/0619
Inventor 王颖徐立坤曹菲刘云涛邵雷
Owner HARBIN ENG UNIV
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