Schottky device with groove structure

Abstract

The invention provides a Schottky device with a groove structure, comprising an anode electrode (1), a silicon dioxide layer (2), a P+ protection ring (3), a Schottky contact part (4), a P-type doping region (5), an N-type drift region (6), an N+ substrate region (7) and a cathode electrode (8); the groove structure is etched in the N-type drift region (6); the P-type doping region (5) is firstly formed in a groove; and then Schottky Metal sputtering is performed so as to form the Schottky contact part in the groove. The groove is etched in a drift region in an ordinary SBD structure to firstly form the P-type doping region, and then Schottky metal and the N-type drift region are sputtered to form the Schottky contact. Without sacrificing the reverse characteristic of the device, the forward conducting current of the Schottky device is improved. The implementing technique and the junction barrier control the JBS technique of a Schottky diode to be compatible, thus being easy to realize, and the requirements of a modern electronic system can be met better.

Description

technical field [0001] The invention relates to an electronic component, in particular to a Schottky device with a trench structure. Background technique [0002] Schottky barrier diodes (Schottky Barrier diodes) are devices that use the contact barrier between metals and semiconductors to work. They are suitable for high-frequency rectification, detection and mixing in low-voltage and high-current output applications, and in high-speed logic circuits. used as a clamp. For Schottky devices, we need small turn-on voltage, large turn-on current, low reverse leakage, and high breakdown voltage. Silicon material has become the most important semiconductor material due to its excellent physical properties, mature planar technology and low cost. However, the withstand voltage of Si-based SBD produced by traditional technology is generally not high, around 40V, and the reverse leakage current is relatively large. And if you need to reduce the reverse leakage current and increase...

AI Technical Summary

Problems solved by technology

However, the forward characteristics of the device have not been improved very well. On the contrary, due to the existence of the P-type doped region, the current density when the device is turned on will be reduced, and the forward conduction current will be reduced.

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