Infrared absorption structure and uncooled infrared detector based on infrared absorption structure

An infrared absorption and infrared technology, applied in the field of thermal radiation infrared detection, can solve the problem of poor infrared response uniformity, and achieve the effects of eliminating poor infrared response uniformity, high infrared absorption, and high utilization rate of radiation energy.

Inactive Publication Date: 2011-10-26
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

[0006] In order to solve the above problems, the invention provides a kind of infrared absorbing structure, and this structure has high absorptivity in the long-wave band (8~12 microns), and is insensitive to the incident angle of infrared radiat

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  • Infrared absorption structure and uncooled infrared detector based on infrared absorption structure
  • Infrared absorption structure and uncooled infrared detector based on infrared absorption structure
  • Infrared absorption structure and uncooled infrared detector based on infrared absorption structure

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Embodiment Construction

[0024] A detailed description of the infrared absorption structure and detector of the present invention is given below.

[0025] Such as figure 1 As shown, a typical infrared absorbing structure provided by the present invention includes a bottom infrared reflective layer 11, a first insulating layer 12, an infrared sensitive layer 13, and a surface structure layer 14 which are sequentially stacked against the incident direction of infrared radiation. The infrared radiation beam 10 enters the infrared absorption structure from the surface structure layer 14.

[0026] The bottom infrared reflective layer 11 can be a metal material with high conductivity σ or low resistivity ρ (ρ=1 / σ), or a metal compound with high conductivity, or a highly doped semiconductor material. The high conductivity is Refers to resistivity ≤10mΩ·cm, high doping refers to free carrier concentration ≥1×10 19 cm -3 . Metal materials such as gold, silver or aluminum, metal compounds such as indium tin metal o...

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Abstract

The invention discloses an infrared absorption structure and an uncooled infrared detector based on the infrared absorption structure. The structure is composed of a bottom infrared reflecting layer with high conductivity, a first insulating layer, an infrared sensitive layer, a second insulating layer and a surface structure layer, wherein the above-mentioned layers are overlaid successively. The surface structure layer is manufactured by nonmetal conductive materials and has an island-like array structure in a circle or square shape, wherein the array structure is distributed according to two-dimension period. On the basis of the structure of the surface structure layer, it is easy to design a high-infrared absorption structure with a certain spectral width by selecting an appropriate surface conductive property; meanwhile, an infrared response of wide angle can be obtained. An infrared detector based on the infrared absorption structure has advantages of low thermal mass and no limitation of a cavity height of thermal insulation. Moreover, the infrared absorption structure is not sensitive to an incident angle of infrared radiation. Therefore, the infrared absorption structurecan be widely applied to fields including an infrared biochemical sensor, an infrared spectrometer, and an uncooled infrared thermal imaging system and the like.

Description

Technical field [0001] The invention belongs to thermal radiation infrared detection technology, and particularly relates to a multilayer infrared absorption structure with low thermal mass, wide angle and high infrared absorption rate and an uncooled infrared detector based on the structure. Background technique [0002] The non-cooled infrared detector uses the thermal infrared radiation of the target object to detect the target. The principle is that the photosensitive area of ​​the infrared detector absorbs the thermal infrared radiation incident from the outside to increase the temperature of the photosensitive element itself. The temperature-increasing photosensitive element converts its own temperature change into a certain physical, chemical or electrical characteristic change of its attribute and forms a detection through an external detection system. Compared with refrigerated infrared detectors, non-refrigerated infrared detectors have the advantages of low price, sma...

Claims

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Application Information

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IPC IPC(8): G01J5/02G01J5/10
Inventor 赖建军
Owner HUAZHONG UNIV OF SCI & TECH
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