Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel method for manufacturing chip diode

A manufacturing method and diode technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high energy consumption, high complexity, and high cost, and achieve the effects of reducing pollution, reducing corrosion, and improving high-temperature performance.

Inactive Publication Date: 2012-11-21
RUGAO EADA ELECTRONICS
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing SMD diode chips are generally made by chip GPP and copper frame with multiple glass firing and multiple photolithography. Due to the complexity and high cost in the production process, and the need for pre-welding in the production process, the two Only one welding can be completed, the efficiency is low, and its energy consumption is large; therefore, it is necessary to improve the existing production method of SMD diodes to ensure the performance of the product and greatly reduce the cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] A kind of manufacturing method of chip diode, it comprises the following steps:

[0014] (1) Put the two copper lead electrodes, welding pieces, and diode chips into the fixture, and send them to the welding furnace to heat up, and the temperature is t 1 For: 290℃≤t 1 ≤305℃, temperature control time h 1 For: 14 minutes ≤ h 1 ≤16 minutes, use nitrogen as the shielding gas during welding;

[0015] (2) Slowly drop the diode material in step (1) to t with the temperature of the welding furnace 2 For: 95℃≤t 2 ≤105℃, temperature control time h 2 For: 28 minutes ≤ h 2 ≤32 minutes;

[0016] (3) the diode material of step (2) is packed in the pickling dish;

[0017] (4) Carry out pickling to the diode material of step (3), the pickling liquid is: HF: HNO 3 :HAC:H 2 SO 4 =9:9:12:4, the volume ratio etch to remove the scribing mechanical damage layer, time h 3 For: 135 seconds ≤ h 3 ≤155 seconds;

[0018] (5) Use high-purity water to flow the diode material in step (...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a novel method for manufacturing a chip diode. The method comprises the following steps of: welding two copper leading wire electrodes of the diode, a soldering lug and a diode chip; pickling; washing by using high purity water; washing by using absolute ethanol; drying; coating; injecting; and processing a pin to form a finished product. The method is characterized in that: in the step of pickling, pickling is performed by adding acid liquor at a fixed point; in the step of washing by using the high purity water, the diode is washed by spraying water flow in a fan-shaped manner. According to the method, a mode of acid addition during pickling is changed, the traditional scattered mode is changed into the method of acid liquor addition at the fixed point, the acid consumption is reduced, the pollution to the environment is reduced, the corrosion to copper leading wires is reduced; and the high temperature performance of a product is greatly improved during washing, and the production process is simple and mature, high in efficiency, and low in energy consumption.

Description

technical field [0001] The invention relates to the manufacture of semiconductor diodes, in particular to a method for manufacturing a patch diode with low cost and superior performance. Background technique [0002] With the advancement of science and technology, the electrical appliance industry is developing towards high integration and high power, and the cost of raw materials continues to rise, which puts forward higher requirements for the cost and quality of SMD diodes. Existing SMD diode chips are generally made by chip GPP and copper frame with multiple glass firing and multiple photolithography. Due to the complexity and high cost in the production process, and the need for pre-welding in the production process, the two Only one welding can be completed, the efficiency is low, and its energy consumption is large; therefore, it is necessary to improve the existing production method of patch diodes to ensure the performance of the product and greatly reduce the cost....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L21/00
Inventor 黄建山张练佳陈建华梅余锋贲海蛟
Owner RUGAO EADA ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products