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Preparation method of p-CuAlO2/n-ZnO:Al transparent thin film heterojunction of glass substrate

A p-cualo2, glass substrate technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the performance cannot meet the application requirements, the process is complicated, and the equipment is expensive, and achieves good light transmittance in the visible light region. , precise control, high uniformity effect

Inactive Publication Date: 2011-11-16
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these existing methods are generally expensive in equipment, complicated in process, relatively high in cost, and their performance still cannot meet the application requirements.
So far, there are no reports and patents on the preparation of p-CAO / n-AZO transparent heterojunctions by sol-gel combined with ultrasonic spray pyrolysis

Method used

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  • Preparation method of p-CuAlO2/n-ZnO:Al transparent thin film heterojunction of glass substrate
  • Preparation method of p-CuAlO2/n-ZnO:Al transparent thin film heterojunction of glass substrate
  • Preparation method of p-CuAlO2/n-ZnO:Al transparent thin film heterojunction of glass substrate

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Experimental program
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Effect test

Embodiment 1

[0055] A glass substrate p-CuAlO 2 / n-ZnO: the preparation method of Al transparent film heterojunction, comprises the steps:

[0056] (1) Using quartz glass as the substrate, the substrate is subjected to surface treatment and cleaning; the process steps of surface treatment and cleaning are:

[0057] ①Soak in sodium hydroxide solution for 24 hours to remove the remaining attachments on the surface;

[0058] ② Ultrasonic cleaning with acetone for 10-15 minutes to remove organic matter on the substrate surface;

[0059] ③Ethanol supershock for 8-10 minutes to remove hydrocarbons on the glass surface;

[0060] ④Finally, supershock with deionized water for 10 minutes to remove residual ethanol;

[0061] (2) Preparation of CAO sol: the raw materials whose purity is 99.99% of analytical purity are used:

[0062] Aluminum nitrate (Al(NO 3 ) 3 9H 2 O) 102.04 grams

[0063] Copper acetate (Cu(CH 3 COO) 2 ·H 2 O) 77.66 grams

[0064] Ethylene glycol methyl ether (CH 3 OCH...

Embodiment 2

[0092]Carry out according to the method step of embodiment 1, difference is:

[0093] (2) The following raw materials (whose purity is 99.99% of analytical purity) are used to prepare CAO sol:

[0094] Aluminum nitrate (Al(NO 3 ) 3 9H 2 O) 116.67 grams

[0095] Copper acetate (Cu(CH 3 COO) 2 ·H 2 O) 77.66 grams

[0096] Ethylene glycol methyl ether (CH 3 OCH 2 CH 2 OH) 1000ml

[0097] Wherein: (a) the mol ratio of solute aluminum nitrate and copper acetate is 0.80: 1.00; (b) 0.700 mole of solute (which contains: 0.311 mole of aluminum nitrate, 0.389 mole of copper acetate) is mixed with 1000 milliliters of ethylene glycol methyl ether solvent.

[0098] (4) The wet film of the glue is dried at a low temperature at 100°C to remove the carbon and hydrogen components in the wet film;

[0099] (5) Preheating the dried film on a constant temperature hot plate at 350°C;

[0100] (6) Repeat the above steps (3)-(5) eight times to obtain a CAO film with a thickness of about...

Embodiment 3

[0109] Carry out according to the method step of embodiment 1, difference is:

[0110] (2) The following raw materials (whose purity is 99.99% of analytical purity) are used to prepare CAO sol:

[0111] Aluminum nitrate (Al(NO 3 ) 3 9H 2 O) 131.30 grams

[0112] Copper acetate (Cu(CH 3 COO) 2 ·H 2 O) 77.66 grams

[0113] Ethylene glycol methyl ether (CH 3 OCH 2 CH 2 OH) 1000ml

[0114] Wherein: (a) the mol ratio of aluminum nitrate and copper acetate is 0.90: 1.00; (b) 0.740 mole solute (wherein contains: aluminum nitrate 0.350 mole, copper acetate 0.389 mole) mixes 1000 milliliters of ethylene glycol methyl ether solvents.

[0115] (4) The wet film of the glue is dried at a low temperature at 120°C to remove the carbon and hydrogen components in the wet film;

[0116] (5) Preheating the dried film on a constant temperature hot plate at 370°C;

[0117] (6) Repeat the above steps (3)-(5) seven times to obtain a CAO film with a thickness of about 280nm;

[0118] (7...

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Abstract

The invention discloses a preparation method for a p-CuAlO2 / n-ZnO:Al transparent thin film heterojunction of a glass substrate. The preparation method comprises the following steps of: (1) preparing a p-CAO transparent conductive thin film by adopting a Sol-Gel process and preparing an n-AZO transparent conductive thin film by adopting an ultrasound spray pyrolysis (USP) process; (2) performing glue averaging, layering and preheating for many times during preparation of the p-CAO thin film; (3) annealing the p-CAO thin film under an argon environment; (4) depositing the n-AZO transparent conductive thin film on the substrate covered with the CAO thin film by adopting the USP process; and (5) heating the substrate during deposition of the n-AZO transparent conductive thin film, making the temperature of the substrate not more than 320 DEG C and naturally cooling the sample to obtain the p-CuAlO2 / n-ZnO:Al(p-CAO / N-AZO) transparent thin film heterojunction. The method is novel and simple and the requirement of a large-area film forming process can be met; furthermore, the prepared p-CAO / n-AZO heterojunction has a fully transparent structure, can realize a p-n node function and has high photoelectric performance.

Description

Technical field: [0001] The invention relates to photoelectric thin film materials and devices, in particular to a glass substrate p-CuAlO 2 / n-ZnO: Al (p-CAO / n-AZO) transparent film heterojunction preparation method. Background technique: [0002] Although transparent conductive oxides (TCOs) materials have been developed vigorously in the past few decades, their applications are still very limited. They are only used as transparent electrodes or infrared reflective coatings, and it is difficult to become a real "Transparent devices", so far there are few reports on the application of TCOs in active devices. The main reason is that there are very few p-type TCOs materials, and their photoelectric performance is far from that of n-type TCOs materials, so it is impossible to realize a fully transparent p-n junction with good performance. Since various semiconductor functional devices are based on the p-n junction, it is necessary to prepare a p-TCOs film with superior perfo...

Claims

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Application Information

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IPC IPC(8): H01L21/36H01L21/02
Inventor 王华刘思佳许积文周尚菊杨玲
Owner GUILIN UNIV OF ELECTRONIC TECH
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