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Cu alloy film and display device

A technology for display devices and alloy films, applied in optics, instruments, transistors, etc., can solve problems such as no teaching, and achieve the effects of superior wet etching, low resistivity, and deviation suppression of film thickness distribution

Inactive Publication Date: 2011-11-16
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no teaching on the relationship between oxygen and the adhesion of Cu wiring

Method used

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  • Cu alloy film and display device
  • Cu alloy film and display device
  • Cu alloy film and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0107] (production of samples)

[0108] In the present embodiment, a pure Cu film or a Cu alloy film (hereinafter, sometimes referred to as a Cu alloy film) is fabricated on a glass substrate (manufactured by Corning Corporation, #1737, diameter 100mm×thickness 0.7mm) by DC magnetron sputtering method. Cu alloy film is a representative) sample (film thickness: 500 nm). The Cu alloy film of this example is composed of a substrate layer and an upper layer (the layer from the substrate layer to the surface of the Cu alloy film), and the oxygen content and alloy composition contained in the substrate layer and the upper layer are shown in Table 1 and Table 2. Among them, sample Nos. 1 to 32 in Table 1 are examples in which the alloy composition (type and content) of the upper layer and the underlayer are the same, and the composition (upper layer=lower layer) column shows the composition of the entire Cu alloy film. For example, in Table 1, No. 5 (upper layer=lower layer=Cu-0.05N...

Embodiment 1-2

[0163] In this example, the influence of the type and amount of alloy elements in the substrate layer on the adhesion was studied. In this example, as in Example 1-1, a Cu alloy film made of a Cu alloy substrate layer (film thickness: 50nm) and a Cu alloy upper layer (film thickness: 250nm) having the same composition as the substrate layer was produced. material, and a pure Cu film sample with a film thickness of 300 nm for comparison was prepared. The formation of the Cu alloy film is the same as that in Example 1-1, using a sputtering target provided with a chip (chip) containing elements other than Cu (Ni, Al, Mn, W, Zn) on the pure Cu sputtering target. , for Ca, a sputtering target in which a Cu—Ca alloy of a predetermined composition is produced by melting (melting) is used. In addition, adding oxygen to the Cu alloy film is performed by controlling the sputtering gas used in the above-mentioned film formation. More specifically, in the film formation of the substrate...

Embodiment 1-3

[0167] In this example, the influence of the film thickness of the base layer on the adhesion was studied. The preparation of the sample was the same as in Example 1-2 except for the following points. The difference is that both the base layer and the upper layer were made of Cu-2 atomic % Zn, and the film thickness of the base layer was set within the range of 10 to 200 nm. Variety. In addition, as a comparison, a sample in which pure Ar gas was also used in the film formation of the underlayer and the underlayer did not contain the sample was produced. Thereafter, about the sample immediately after film formation, the adhesiveness was evaluated in the same manner as in Example 1-1. The result is as Figure 7 shown.

[0168] according to Figure 7 It can be seen that the adhesiveness tends to improve as the film thickness of the base layer increases. In addition, the effect of improving the adhesion is saturated when the film thickness is about 100 nm, and even if the fi...

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Abstract

Disclosed is a Cu alloy film which has high adhesion to a transparent substrate or a semiconductor layer, a low electrical resistivity and excellent wet etching properties. Specifically disclosed is a Cu alloy film for use in a display device, which is an oxygen-containing alloy film that meets the following requirements (1) and (2): (1) the Cu alloy film contains at least one element selected from a group consisting of Ni, Al, Zn, Mn, Fe, Ge, Hf, Nb, Mo, W and Ca in the total amount of 0.10 to 10 at.% inclusive; and (2) the Cu alloy film has an under layer and a top layer having different oxygen contents from each other, wherein the under layer is contacted with the transparent substrate or the semiconductor layer and has an oxygen content higher than that in the top layer.

Description

technical field [0001] The present invention relates to a Cu alloy film used in a display device such as a liquid crystal display or an organic EL display, and a display device including the Cu alloy film. A Cu alloy film and a display device that are superior in adhesion, such as a Cu alloy film and a semiconductor layer of a thin film transistor. Background technique [0002] Aluminum (Al) alloy films have hitherto been used in the wiring of display devices typified by liquid crystal displays. However, as the size and quality of display devices increase, the problems of signal delay and power loss due to large wiring resistance become prominent. Therefore, attention has been paid to copper (Cu), which has a lower resistance than Al, as a wiring material. The resistivity of Al is 2.5×10 -6 Ω·cm, compared to this, Cu has a low resistivity of 1.6×10 -6 Ω·cm. [0003] However, the adhesiveness of Cu and a glass substrate is low, and there existed a problem of peeling. In...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G02F1/1368H01L21/28H01L21/285H01L21/3205H01L21/768H01L23/52
CPCG02F1/13439H01L23/53233H01L29/4908H01L27/1214H01L29/458H01L27/124H01L2924/0002H01L2924/00
Inventor 大西隆后藤裕史富久胜文三木绫钉宫敏洋
Owner KOBE STEEL LTD
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