Preparation method of one-dimensional scale limited graphene nano band

A graphene nanoribbon and scale technology, applied in nanotechnology, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of complex preparation and difficult width control, and achieve precise preparation, high yield and simple preparation process. Effect

Inactive Publication Date: 2011-11-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing graphene nanoribbons, which is used to solve the

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  • Preparation method of one-dimensional scale limited graphene nano band
  • Preparation method of one-dimensional scale limited graphene nano band
  • Preparation method of one-dimensional scale limited graphene nano band

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[0017] In the preparation technology of graphene nanoribbons, the inventor of the present invention has improved the existing technology and proposed a novel method for preparing graphene nanoribbons with limited one-dimensional scale, which is mainly used in transition The surface of the metal substrate uses photoresist as the implantation mask, and the carbon ions are implanted into the specific area of ​​the transition metal substrate at the calculated preferred implantation angle, and the carbon atoms are precipitated and reconstructed by thermal annealing treatment, so that the transition metal One-dimensional graphene nanoribbons with a width close to or even less than 10 nm are formed on the surface of the substrate.

[0018] The following describes the present invention more completely in conjunction with the drawings. The present invention provides preferred embodiments, but should not be considered as limited to the embodiments set forth herein. In the figure, in order ...

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Abstract

The invention discloses a preparation method of a one-dimensional scale limited graphene nano band, which comprises the steps of: providing a transition metal substrate; coating photoresist on the surface of the transition metal substrate to form a photoresist layer; transferring a defined pattern to the photoresist layer through exposure development to form a photoresist graph; with the photoresist layer as a mask, carrying out carbon ion injection in the transition metal substrate to form a carbon ion injection region; figuring out an injection angle for the carbon ion injection according to the graphene width in combination with the thickness of the mask of the photoresist layer and the width of the photoresist graph; and removing the photoresist layer; and carrying out thermal annealing, separating carbon atoms from the carbon ion injection region for reconstruction, and forming the one-dimensional scale limited graphene nano band with a width of close to even less than 10nm on the surface of the transition metal substrate. Compared with the prior art, the preparation method is used for preparing the graphene nano band by carrying out carbon ion injection at a calculated specific injection angle, and has the advantages of accuracy in preparation, simple preparation process and high yield.

Description

technical field [0001] The invention relates to the field of graphene manufacture, in particular to a method for preparing a one-dimensional scale-limited graphene nanoribbon. Background technique [0002] According to Moore's Law, the integration level of chips doubles every 18 months to 2 years, that is, the processing line width is reduced by half. The development path of extending Moore's Law by using silicon-based semiconductor materials with decreasing dimensions (the processing limit of silicon materials is generally considered to be 10 nanometer line width) is gradually approaching the end. With the continuous reduction of device size in the field of microelectronics, silicon material is gradually approaching its processing limit. [0003] In order to prolong the life of Moore's Law, the international semiconductor industry has proposed beyond silicon technology (Beyond Silicon), among which the most promising graphene came into being. Graphene, as a new type of tw...

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Application Information

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IPC IPC(8): H01L21/02B82Y40/00
Inventor 程新红张有为徐大伟王中健夏超俞跃辉
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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