A kind of ingot casting method of 800 kg single polycrystalline silicon

A single-polysilicon, kilogram-level technology, applied in the field of crystalline silicon ingots and photovoltaics, can solve problems such as low production capacity, and achieve the effect of large production capacity and advanced technology

Active Publication Date: 2011-12-28
JINGYUNTONG TECH CO LTD
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  • A kind of ingot casting method of 800 kg single polycrystalline silicon
  • A kind of ingot casting method of 800 kg single polycrystalline silicon
  • A kind of ingot casting method of 800 kg single polycrystalline silicon

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[0034] The present invention will be further described in detail below with reference to the accompanying drawings, so that those skilled in the art can implement it with reference to the text of the description.

[0035] Such as figure 1 with figure 2 As shown, the present invention provides an 800 kg-level monopolycrystalline silicon ingot casting method, which includes the following steps:

[0036] Step 1. Choose 1-50mm thick square monocrystalline silicon wafers with a length and width of 156x156mm and lay them tightly and evenly on the bottom of the crucible with a bottom outer size of 1050x1050mm;

[0037] Step 2: Add native polycrystalline silicon material and alloy matched according to the target resistivity on the square single crystal silicon wafer, and the total charge is at least 800kg;

[0038] Step 3. Vacuum and leak detection steps: Put the crucible containing the above-mentioned silicon material and alloy into the ingot furnace, and start vacuuming and leak detection,...

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Abstract

The invention provides an ingot casting method for single polysilicon of 800kg. The method comprises the steps of: step 1, selecting a square monocrystalline silicon wafer of 156*156mm in size and 1-50mm in thickness and laying it tightly and uniformly at a crucible bottom with an external dimension of 1050*1050mm; step 2, adding a primary polysilicon material and an alloy matching with the target resistivity to the square monocrystalline silicon wafer, and at least 800kg of materials are charged altogether; step 3, conducting vacuum pumping and leak detection; step, carrying out heating; step 5, implementing melting; step 6, performing crystal growth: after 30min of insulation, opening an insulating cage to a degree of 8cm and controlling the fall of temperature to 1436DEG C within one hour, then opening the insulating cage to a degree of 10cm, with the temperature maintained at 1436DEG C; step 7, conducting annealing. The single polysilicon ingot prepared with the method of the invention contains a majority of monocrystalline silicon and little polycrystalline silicon. Able to casting a single polysilicon ingot over 800kg at one time, the casting method provided in the invention greatly improves the production efficiency.

Description

technical field [0001] The invention belongs to the photovoltaic industry and relates to a casting ingot of crystalline silicon, in particular to a method capable of casting single-polycrystalline silicon ingot weighing more than 800 kilograms at one time. Background technique [0002] The ingot casting furnace is the key equipment in the middle and upper reaches of the photovoltaic industry. It is mainly used for the large-scale production of solar-grade polysilicon ingots. It uses advanced polysilicon directional solidification technology to melt the silicon material at high temperature and then condenses and crystallizes it through a special process to achieve solar cell production. It is an intelligent large-scale production equipment suitable for long-term continuous work, high precision, high reliability, and high degree of automation. [0003] At present, at home and abroad, the G5 generation ingot casting technology with a weight of less than 600 kg is basically used...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 郭大伟王楠王再东霍帅
Owner JINGYUNTONG TECH CO LTD
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