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A large field of view wide spectral line lithography projection objective lens

A technology of lithographic projection and objective lens, which is applied in the field of semiconductors, can solve problems such as complex structures, and achieve the effect of high yield and simple structure

Active Publication Date: 2011-12-28
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The structure of the objective lens is relatively complex, and the spectrum is only g-line and h-line

Method used

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  • A large field of view wide spectral line lithography projection objective lens
  • A large field of view wide spectral line lithography projection objective lens
  • A large field of view wide spectral line lithography projection objective lens

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] figure 1 It is a structural diagram of the first embodiment of the lithography projection objective lens of the present invention, including 18 lenses, all of which are spherical lenses. The applicable spectrum is a wide spectral band including g-line, h-line and i-line, providing a field of view of 200mm and a magnification of -1.

[0064] As shown in the figure, the first, second and third lens groups in front of the diaphragm constitute the front group lens Gf. The first lens group Gf1 consists of a biconcave lens and a biconvex lens. The second lens group Gf2 is composed of a meniscus lens, a biconcave lens and a biconvex lens, and the meniscus lens is bent toward the mask direction. The third lens group Gf3 consists of a biconvex lens, a biconvex lens, a biconcave lens, and a meniscus lens.

[0065]The rear group is symmetrical about the aperture with respect to the front group.

[0066] The focal length of the first lens group Gf1 in the front group Gf is posi...

Embodiment 2

[0088] Figure 4 It is a structural diagram of the second embodiment of the lithography projection objective lens of the present invention. As shown, the system contains 18 lenses, all of which are spherical lenses. The applicable spectrum is a wide spectral band including g-line, h-line and i-line, providing a field of view of 200mm and a magnification of -1.

[0089] As shown in the figure, the first lens group Gf1 in the front group Gf is composed of a biconcave lens, a meniscus lens and a meniscus lens, and the meniscus lens is bent toward the mask direction; the second lens group in the front group Gf Gf2 is made up of a double-concave lens and a double-convex lens, and the third lens group Gf3 in the front group Gf is made up of a double-convex lens, a double-convex lens, a double-concave lens, a meniscus lens, and the concave surface of the meniscus lens faces the diaphragm;

[0090] The rear group Gr is symmetrical about the aperture with respect to the front group G...

Embodiment 3

[0112] Figure 7 It is a structural diagram of the third embodiment of the lithography projection objective lens of the present invention, including 16 lenses, all of which are spherical lenses. The applicable spectrum is a wide spectral band including g-line, h-line and i-line, providing a field of view of 200mm and a magnification of -1.

[0113] As shown in the figure, the first lens group Gf1 is composed of a biconcave lens and a biconvex lens. In addition, the second lens group Gf2 in the front group Gf consists of a biconcave lens and a biconvex lens. The third lens group Gf3 in the front group Gf consists of a biconvex lens, a biconvex lens, a biconcave lens, and a meniscus lens, and the meniscus lens is bent towards the diaphragm.

[0114] The rear group Gr is symmetrical about the aperture with respect to the front group Gf.

[0115] The focal length of the first lens group Gf1 in the front group Gf is positive and relatively large, which is mainly conducive to the...

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Abstract

The invention discloses a lithography projection objective with large view field and wide spectral line. The image of a mask is focused and imaged on a silicon chip; and a front lens group, an aperture diaphragm and a rear lens group are sequentially arranged along an optical axis from the mask. The front lens group consists of three lens groups, and the rear lens group is symmetrical to the front lens group relative to the aperture diaphragm. The half view field of the image space of the photolithography objective with large view field and wide band is 100 millimeters; the lithography projection objective is suitable for bands of lines g, h and i, can collect enough spectral energy of a mercury lamp, and is convenient for achieving relatively high yield; the numerical aperture of the objective reaches 0.1; and the objective can be used for exposing fine lines, has simple structure, and only comprises 16 to 18 lenses.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a photolithography projection objective lens which can be applied in step exposure equipment. Background technique [0002] A lithographic apparatus is a device that applies a desired pattern to a workpiece. Typically a device that utilizes a beam of radiation to apply a desired pattern to a target portion of a workpiece. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). Generally, the scope of lithography equipment includes but is not limited to: integrated circuit manufacturing lithography equipment, flat panel display panel lithography equipment, MEMS / MOEMS lithography equipment, advanced packaging lithography equipment, printed circuit board lithography equipment, printed circuit board processing devices and printed circuit board component placement devices, etc. [0003] At present, in the field of semiconductor pro...

Claims

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Application Information

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IPC IPC(8): G02B13/06G02B13/00G02B13/18G02B13/22G03F7/20
Inventor 黄玲
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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