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Two-step synthesis method of gallium selenium indium copper thin film solar cell materials

A solar cell and copper thin film technology, which is applied in the direction of selenium/tellurium compound, binary selenium/tellurium compound, metal material coating process, etc., can solve the problems that CuSe cannot be guaranteed, and achieve safety without explosion hazard, stable process, and time-saving shortened effect

Inactive Publication Date: 2016-03-23
江西科泰新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] If the vacuum non-tight tube method is used, there is no guarantee that CuSe, In 2 Se 3 , Ga 2 Se 3 Composition of three compounds and their adducts

Method used

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  • Two-step synthesis method of gallium selenium indium copper thin film solar cell materials
  • Two-step synthesis method of gallium selenium indium copper thin film solar cell materials

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Embodiment Construction

[0024] The two-step synthesis method of the selenium-gallium-indium-copper thin-film solar cell material of the present invention comprises the following steps:

[0025] 1) Pre-processing of raw materials

[0026] The raw materials are all high-purity materials with 5 nines, and the content of impurities in the product is required to meet the requirements in Table 1. And subject to strict cleaning. (1) Treatment of high-purity copper (Cu): 5N copper ingots are cut and processed into wires, with 10%HCl:1%HNO 3 The treatment solution was treated for 3 minutes, then rinsed with deionized water until neutral, and finally dried with infrared rays for use.

[0027] Table 1

[0028]

[0029] (2) Treatment of high-purity indium (In): 5N indium is broken into fine particles, washed with 10% HCl solution, then rinsed with deionized water to neutral pH=7, dehydrated with ethanol, and finally dried with infrared rays for use .

[0030] (3) Treatment of high-purity gallium (Ga): 5N...

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Abstract

The invention relates to a two-step synthetic method for a copper indium gallium selenide thin film solar cell material. The method is characterized by comprising the following steps of: 1) preprocessing raw materials which are 5N high-purity materials, and cleaning as follows; and 2) firstly, smelting alloy, wherein a ratio of CuIn to Ga in Cu1InXGa1-X alloy is 0.666:0.333; and secondly, selenizing, namely selenizing in a sealed tube, putting the alloy in which the ratio of CuIn to Ga is 0.666:0.333 obtained through smelting and selenium into the tube, pumping the tube until the vacuum degree is 10 to 2 Pa, sealing the orifice to obtain the sealed tube, putting the sealed tube into a high-temperature box type furnace, heating under the conditions of the highest temperature of 750 DEG C and the selenizing time of 5 hours to obtain the finished product Cu(In0.666Ca0.333)Se2 subjected to selenation, crushing the synthetic products which have big block shapes into small blocks in protective atmosphere or powder with the granularity of 80 to 325 meshes, taking the sealed tube out of the furnace after the reaction in the tube is finished, pouring out the Cu(In0.666Ca0.333)Se2 blocks, encapsulating the Cu(In0.666Ca0.333)Se2 blocks by using plastic bags in the vacuum degree of 10 to 1 torr, and feeding into a finished product storage. The two-step synthetic method for the copper indium gallium selenide thin film solar cell material is stable and safe and does not have explosion danger.

Description

technical field [0001] The invention relates to a synthesis process of selenium-gallium-indium-copper thin-film solar cell materials. Background technique [0002] Energy is a common concern of the world. To solve the energy crisis, solar power has become an important industry. Selenium-gallium-indium-copper (CIGS) thin film solar cells are booming in recent years. The United States, Japan, Britain, France, Russia, Germany, and China including Taiwan have all entered into large-scale production from the research and development stage, so the development of CIGS materials has also entered the large-scale stage. [0003] The adducts of CIGS are generally synthesized in a single-temperature zone liquid phase in a vacuum tube, and the maximum temperature of the synthesis is 1150°C. At high temperatures, the vapor pressure of selenium is very high. The quartz tube cannot withstand such a large pressure, and the process operating conditions are not well controlled. , there will ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00C01B19/04C23C14/34C23C14/06
Inventor 舒小敏吴文斌
Owner 江西科泰新材料有限公司