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Efficient preparation method of silicon cores and silicon core preparation furnace

A high-efficiency, silicon-core technology, applied in the silicon-core preparation furnace, in the field of high-efficiency silicon-core preparation, to achieve the effect of reducing costs

Inactive Publication Date: 2012-02-08
天威四川硅业有限责任公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has not been used to prepare polycrystalline, so now it is specially designed to use the modified single crystal furnace to efficiently prepare polycrystalline silicon cores

Method used

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  • Efficient preparation method of silicon cores and silicon core preparation furnace
  • Efficient preparation method of silicon cores and silicon core preparation furnace
  • Efficient preparation method of silicon cores and silicon core preparation furnace

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Embodiment Construction

[0029] The method will be further described in detail below in conjunction with the embodiments and accompanying drawings.

[0030] This method is a preparation method that can pull multiple silicon cores at the same time, and its steps are as follows:

[0031] In the first step, polysilicon is placed in a quartz crucible 11 and heated to melt, and the melting temperature is 1410°C;

[0032] In the second step, by lowering the heating power by 2-5kw, the purpose of slightly lowering the temperature of the melted silicon melting zone 3 in the quartz crucible 11 is achieved;

[0033] In the third step, the chuck device with a plurality of silicon seeds 1 is lowered, so that the plurality of silicon seeds 1 under the chuck device are in contact with the silicon melting zone 3, and the temperature and the silicon seed temperature of the silicon melting zone 3 are adjusted. The upward lifting speed of the crystal 1 makes the diameter of the silicon seed crystal 1 gradually increas...

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Abstract

The invention relates to a preparation process in the field of silicon core preparation and in particular relates to an efficient preparation method of silicon cores. The method comprises the following steps: heating and melting polysilicon in a quartz crucible, and cooling a molten silicon melting zone; driving multiple seed crystals to move downwards so that the seed crystals contact the silicon melting zone, and adjusting the temperature of the silicon melting zone and the lifting speed of the seed crystals so that the diameter of the seed crystals becomes larger and larger gradually; when the diameter of the silicon cores is close to a target diameter, controlling the diameter of the seed crystals to be subjected to equal diameter growth; and in the later growing stage, stopping feeding, controlling the speed to separate the silicon cores from the silicon melting zone according to the diameter of the silicon cores, then placing the pulled silicon cores at the silicon core storage position of a turntable, and moving a seedholder at a seedholder position to perform fusion splicing. The method corresponds to a special silicon core preparation furnace. The corn material, offcuts and the like obtained in the polycrystalline production process can be fully utilized in the method, thus the energy consumption, investment and labor cost of a polysilicon preparation process can be reduced and the production cost of the solar-grade polysilicon can also be reduced.

Description

technical field [0001] The invention relates to a preparation process in the field of silicon core preparation, in particular to a method for preparing silicon cores with high efficiency and a silicon core preparation furnace. Background technique [0002] In recent years, the photovoltaic industry mainly based on crystalline silicon cells has developed rapidly, and the production technology of polysilicon is also making rapid progress. Silicon core is the "seed" of polysilicon production. Its preparation methods include: cutting method and zone melting method. At present, the cutting method has not been adopted on a large scale due to the large investment in equipment, high maintenance costs, and large cutting loss of silicon materials. However, The zone dissolution method has been widely used. [0003] Although the technology of preparing silicon core by zone dissolution is constantly improving, there are still some problems. For example, from the earliest single-core fu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/10C30B29/06
Inventor 徐文龙陈少华景远波
Owner 天威四川硅业有限责任公司
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