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Photoresist compositions and methods of forming photolithographic patterns

A photoresist and composition technology, applied in the field of electronic equipment manufacturing, can solve problems such as surface inhibition

Active Publication Date: 2012-02-08
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] A problem associated with the use of chemically amplified photoresists is surface (or top) suppression when printing high-resolution patterns with a negative-tone development process.

Method used

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  • Photoresist compositions and methods of forming photolithographic patterns
  • Photoresist compositions and methods of forming photolithographic patterns
  • Photoresist compositions and methods of forming photolithographic patterns

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0067] Preparation of photoresist composition

[0068] Photoresists used in accordance with the present invention are generally prepared by known methods. For example, resists of the invention can be prepared as coating compositions by dissolving the photoresist components in a suitable solvent, such as one or more glycol ethers, such as 2-methoxyethyl ether (Diethylene glycol dimethyl ether), ethylene glycol monomethyl ether, propylene glycol monomethyl ether; propylene glycol monomethyl ether acetate; lactate, such as ethyl lactate or methyl lactate, preferably ethyl lactate; propionate , especially methyl propionate, ethyl propionate, ethyl ethoxy propionate; cellosolve esters such as methyl cellosolve acetate; aromatic hydrocarbons such as toluene and xylene; or ketones such as methyl ethyl ketone, cyclohexyl ketone and 2-heptanone. The desired total solids level of the photoresist will depend on such factors as the specific polymers in the composition, final layer thick...

Embodiment 1

[0093] Example 1: Synthesis of MAMA / α-GBLMA / MNLMA matrix polymer

[0094] 27.48g MAMA, 15.96g a-GBLMA and 6.57g MNLMA were dissolved in 62g PGMEA. The mixture was degassed by bubbling nitrogen gas for 20 minutes. A 500 mL flask equipped with a condenser, nitrogen inlet and mechanical stirrer was charged with 35 g of PGMEA and the resulting solution was warmed to 80 °C. 2.52 g of V-601 azo initiator (dimethyl-2,2'-azobis(2-methylpropionate) (Wako Specialty Chemicals) dissolved in 2.0 g of PGMEA was injected into the flask. The monomer The solution was injected into the reactor at a rate of 27.42 mL / h. After one hour, 1.26 g of V-601 azo initiator dissolved in 2.0 g of PGMEA was added to the reactor, and the injection of the monomer was carried out for another three hours. After the bulk injection was complete, the polymerization mixture was stirred at 80° C. for another three hours. After seven hours of polymerization (four hours of injection and three hours of stirring), the...

Embodiment 2

[0096] Example 2: Synthesis of IPAMA / MAMA / α-GBLMA / MNLMA Matrix Polymer

[0097] 14.47g IPAMA, 18.09g MAMA, 11.26g α-GBLMA and 6.18g MNLMA were dissolved in 62g PGMEA. The mixture was degassed by bubbling nitrogen for 20 minutes. A 500 mL flask equipped with a condenser, nitrogen inlet and mechanical stirrer was charged with 35 g of PGMEA and the resulting solution was warmed to 80 °C. 2.03 g of V-601 azo initiator dissolved in 2.0 g of PGMEA was injected into the flask. The monomer solution was injected into the reactor at a rate of 27.42 mL / h. After one hour, 1.01 g of V-601 azo initiator dissolved in 2.0 g of PGMEA was added to the reactor, and the monomer injection was continued for another three hours. After monomer injection was complete, the polymerization mixture was stirred at 80°C for an additional three hours. After seven hours of polymerization (four hours of injection and three hours of stirring), the polymerization mixture was cooled to room temperature. A pre...

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Abstract

Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices. The photoresist compositions are provided, comprising a first polymer of acid sensitivity, a second polymer formed by a monomer of the following formula 1 which is not of acid sensitivity and not containing fluorine or silicon, a photoinduced acid generation agent and a solvent. Besides, the surface energy of the second polymer is lower than that of the first polymer.

Description

technical field [0001] The present invention generally relates to the manufacture of electronic devices. More particularly, the present invention relates to a photoresist composition and a photolithography process for forming a fine pattern using a negative tone developing method. The photoresist composition includes one or more polymeric additives that are substantially immiscible with the resinous component of the resist. The preferred compositions and methods of the present invention have improved defects and process windows in photolithographic processes. Background technique [0002] In the semiconductor manufacturing industry, photoresist materials are used to transfer images to one or more underlying layers (eg, metal, semiconductor, and dielectric layers) distributed over a semiconductor substrate, as well as to the substrate itself. In order to increase the integration density of semiconductor devices and form structures with nanometer (nm) dimensions, photoresist...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/038G03F7/00G03F7/20H01L21/311
CPCG03F7/0392G03F7/0395G03F7/0397G03F7/11G03F7/2041G03F7/325C07C2603/74H01L21/0274H01L21/0276C08F220/283G03F7/0045H01L21/0271H01L21/027C07C69/54G03F7/0382G03F7/16G03F7/20G03F7/32G03F7/40
Inventor Y·C·裴D·王T·卡多拉西亚姜锡昊R·贝尔
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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