Method for preparing titanium-doped zinc oxide transparent conductive film on polyethylene terephthalate (PET) flexible substrate

A transparent conductive film and flexible substrate technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of barrier property, poor adhesion, flexible substrate not resistant to high temperature, etc., and achieve good transparency Transient, conducive to nucleation and growth, high visible light transmittance

Inactive Publication Date: 2012-02-15
SHANDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a method for preparing a titanium-doped zinc oxide transparent conductive film on a PET flexible substrate, which can solve the problem that the flexible substrate in the prior art is not resistant to high temperature Achilles heel, and can solve the problem of poor barrier and adhesion, and prepare a transparent conductive film with excellent photoelectric properties

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The method for preparing a titanium-doped zinc oxide transparent conductive film on a PET flexible substrate uses a high-vacuum magnetron sputtering apparatus, cools it with room temperature circulating water, and uses high-purity argon as a sputtering gas, comprising the following steps: a ) Take the PET flexible substrate, place it in an acetone solution at 60 oC, and ultrasonically clean it for 20 minutes; then place the PET flexible substrate cleaned by ultrasonic cleaning in an acetone solution for 20 minutes each; b) soak the above PET flexible substrate The substrate was repeatedly rinsed and dried with high-purity deionized water, and placed in the sputtering chamber; c) Install the TZO ceramic target, whose composition is TiO2:ZnO = 2.1:97.9; d) Adjust the base distance of the target to 52mm; The sputtering power is 60W; the sputtering pressure is 5Pa; the flow rate is 30SCCM; e) start sputtering for 5 minutes to form a homogeneous buffer layer of a flexible TZO...

Embodiment 2

[0026] The method for preparing a titanium-doped zinc oxide transparent conductive film on a PET flexible substrate uses a high-vacuum magnetron sputtering apparatus, cools it with room temperature circulating water, and uses high-purity argon as a sputtering gas, comprising the following steps: a ) Take the PET flexible substrate, place it in an acetone solution at 50 oC, and ultrasonically clean it for 25 minutes; then soak the PET flexible substrate that has been ultrasonically cleaned by the acetone solution in absolute ethanol for 25 minutes each; b) Put the above PET flexible substrate The substrate was repeatedly rinsed and dried with high-purity deionized water, and placed in the sputtering chamber; c) Install the TZO ceramic target, whose composition is TiO2:ZnO = 1.6:98.4; d) Adjust the base distance of the target to 50mm; The sputtering power is 50W; the sputtering pressure is 4Pa; the flow rate is 25SCCM; e) start sputtering for 4 minutes to form a homogeneous buffe...

Embodiment 3

[0028] The method for preparing a titanium-doped zinc oxide transparent conductive film on a PET flexible substrate uses a high-vacuum magnetron sputtering apparatus, cools it with room temperature circulating water, and uses high-purity argon as a sputtering gas, comprising the following steps: a ) Take the PET flexible substrate, place it in an acetone solution at 65oC, and ultrasonically clean it for 15 minutes; then soak the PET flexible substrate that has been ultrasonically cleaned by the acetone solution in absolute ethanol for 15 minutes each; b) Put the above PET flexible substrate bottom, rinsed and dried repeatedly with high-purity deionized water, and placed in the sputtering chamber; c) Install TZO ceramic target, the composition of which is TiO2:ZnO = 2.6:97.4; d) Adjust the base distance of the target to 60mm; The power is 65W; the sputtering pressure is 6Pa; the flow rate is 35SCCM; e) Start the sputtering for 6 minutes to form a homogeneous buffer layer of a fl...

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Abstract

The invention discloses a method for preparing a titanium-doped zinc oxide transparent conductive film on a polyethylene terephthalate (PET) flexible substrate. The method comprises the following steps of: a) cleaning the PET flexible substrate; b) flushing and drying the substrate, and filling the substrate into a sputtering chamber; d) regulating the target-substrate distance to 52 millimeters, regulating the sputtering power to 60W, regulating the sputtering pressure intensity to 5Pa and regulating the flow to 30SCCM; e) sputtering for 5 minutes and stopping for 5 minutes; and f) sputtering for 20 minutes, and thus forming the titanium-doped zinc oxide transparent conductive film on the PET flexible substrate. The method has the advantages that: the optimal film forming temperature of the titanium-doped zinc oxide is low (about 100 DEG C); a homogeneous buffer layer is first deposited on the substrate, so that the blocking property of the substrate is improved, and the substrate is favorable for nucleation and growth of the conductive film; and the substrate is cleaned ultrasonically by an acetone solution, soaked by absolute ethanol and flushed by deionized water, so that the adhesion of the substrate is improved. The transparent conductive film prepared by the method has low resistivity, excellent conductive performance and good light transmission.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoelectric devices, and in particular relates to a method for preparing a titanium-doped zinc oxide transparent conductive film on a PET flexible substrate. Background technique [0002] Transparent conductive film, which has both transparent and conductive functions, is used in flat panel displays, thin film solar cells, thin film transistors (TFT), gas sensors, antistatic coatings, and semiconductor / insulator / semiconductor (SIS) heterojunctions, modern fighters and The windows of cruise missiles and other fields have broad application prospects. In the prior art, transparent conductive films are prepared on hard substrates (glass and ceramics), but these substrates are brittle and difficult to deform, which limits the application of transparent conductive films. With the development of semiconductor technology level, it has become a reality to prepare various thin film semiconductor d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
Inventor 刘汉法
Owner SHANDONG UNIV OF TECH
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