Phase change memory and manufacturing method thereof

Abstract

The invention provides a phase change memory, which comprises a semiconductor substrate with a transistor, a dielectric layer on the semiconductor substrate and a lower electrode passing through the dielectric layer, a first insulating layer, an etching-preventing layer and a second insulating layer on the dielectric layer in turn, and a phase change layer passing through the first insulating layer, the etching-preventing layer and the second insulating layer; the phase change layer is electrically connected with the lower electrode; an etching layer formed between the second insulating layer and the phase change layer; and the etching speed of the first insulating layer is higher than that of the etching layer. The phase change memory can reduce the section width of through hole because the etching layer for limiting the size of through hole will not be consumed in the etching process easily so as to reduce the contacted area of the phase change layer and the lower electrode and reduce the operating current of the phase change memory. Therefore, the phase change can be executed by only applying lower operating current so as to improve the property of memory.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a phase-change memory device and a manufacturing method thereof. Background technique [0002] Compared with the current dynamic random access memory (DRAM) and flash memory (FLASH), phase change random access memory (PCRAM) has obvious advantages: it is small in size, low in driving voltage, low in power consumption, fast in read and write speed, and non-volatile. Phase change memory devices are not only non-volatile memories, but also may be made into multi-machine storage, and used in ultra-low temperature and high temperature environments, anti-radiation, anti-vibration, so they will not only be widely used in daily portable electronic products, but also in aviation There are huge potential applications in aerospace. In particular, its high speed and non-volatility just make up for the shortcomings of flash memory (FLASH) and ferroelectric memory (FeRAM) in po...

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Problems solved by technology

[0014] The invention provides a phase-change memory device and a manufacturing method thereof, which are used to solve the problem that the etching layer is easily consumed in the etching process after it becomes thin.

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