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Electrical contact material and method for preparing CuZrW electrical contact material by adopting infiltration method

An electric contact material and infiltration technology, applied in the direction of contacts, circuits, electric switches, etc., can solve problems such as electrical breakdown, and achieve the effect of improving arc ablation resistance

Inactive Publication Date: 2012-04-25
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide an electrical contact material, which solves the problem that the existing electrical contact materials are prone to electrical breakdown

Method used

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  • Electrical contact material and method for preparing CuZrW electrical contact material by adopting infiltration method
  • Electrical contact material and method for preparing CuZrW electrical contact material by adopting infiltration method
  • Electrical contact material and method for preparing CuZrW electrical contact material by adopting infiltration method

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preparation example Construction

[0030] The preparation method of CuZrW electrical contact material of the present invention, carry out according to the following steps,

[0031] Preparation of CuZr Alloy Ingot

[0032] a. Take electrolytic copper powder with a purity of not less than 99.9% and Zr powder with a purity of not less than 99%. Zr accounts for 1 to 4.0 wt% of copper by weight. Pressed into a green body in the mold;

[0033] b. Put the green body obtained in step a into a corundum crucible, put it in an argon atmosphere furnace for melting, the melting temperature is 1150-1300°C, keep it warm for 0.5-2 hours and then cool it down to room temperature with the furnace to prepare CuZr alloy Ingot;

[0034] c. the CuZr alloy ingot made by step b is removed by machining to remove various defects on the alloy ingot, and cleaned;

[0035] Preparation of tungsten compacts

[0036] a. Take tungsten powder and induced copper powder respectively. The induced copper powder accounts for 5-8% of the mass of ...

Embodiment 1

[0044] First prepare CuZr alloy ingots, respectively take electrolytic copper powder with a purity of not less than 99.9% and Zr powder with a purity of not less than 99%, the mass percentage of Zr in copper is 4.0wt.%, and fully mix the copper powder and Zr powder Finally, press into a green body in a rigid mold; put the prepared green body into a corundum crucible, put it in an argon atmosphere furnace for melting, the melting temperature is 1150°C, keep it warm for 0.5 hours, and then cool it to room temperature with the furnace. Obtain a CuZr alloy ingot; remove various defects on the alloy ingot by machining the obtained CuZr alloy ingot, and clean it;

[0045] Then prepare the tungsten compact, take the tungsten powder and the induced copper powder respectively, the induced copper powder accounts for 6% of the mass of the tungsten powder, put the tungsten powder and the induced copper powder into the mixing tank, add the grinding ball and the mixing process control agent,...

Embodiment 2

[0048] First prepare CuZr alloy ingots, respectively take electrolytic copper powder with a purity of not less than 99.9% and Zr powder with a purity of not less than 99%, and the mass percentage of Zr in copper is 2.0wt.%. Copper powder and Zr powder are fully mixed Finally, press into a green body in a rigid mold; put the prepared green body into a corundum crucible and put it in an argon atmosphere furnace for melting. Obtain a CuZr alloy ingot; remove various defects on the alloy ingot by machining the obtained CuZr alloy ingot, and clean it;

[0049] Then prepare the tungsten compact, take the tungsten powder and the induced copper powder respectively, the induced copper powder accounts for 5% of the mass of the tungsten powder, put the tungsten powder and the induced copper powder into the mixing tank, add the grinding ball and the mixing process control agent, The mass of the added grinding ball is 3 times of the total mass of the tungsten powder and the copper powder, an...

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Abstract

The invention discloses an electrical contact material. A CuZrW composite material is formed by utilizing a CuZr alloy to infiltrate a W framework, wherein the content of Zr in a Cu phase of the material is 1-4.0 wt.% in percentage by mass. The method for preparing the electrical contact material comprises the following steps of: firstly, smelting a certain content of CuZr alloy; adding a certain ratio of induction copper powder into tungsten powder to be uniformly mixed and preparing the mixed powder into a framework green body; and then, sintering the W framework and infiltrating the smelted CuZr alloy into the W framework to prepare the CuZrW material; and finally, carrying out a solution and ageing treatment on the CuZrW material. According to the method provided by the invention, anode spots on the surface of the prepared CuZrW material move rapidly due to strengthening effects on a Cu / W phase interface and a copper-enriched area by the element Zr, electric arcs are effectively dissipated, the splashing of the copper phase is smaller, and the erosion-resistant performance of the material is improved.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and relates to an electric contact material, and also relates to a preparation method of the CuZrW electric contact material. Background technique [0002] CuW material has the advantages of excellent thermal conductivity, good arc ablation resistance, welding resistance and high strength, and is widely used as the electrical contact material in high-voltage circuit breakers. With the development of high-voltage switches towards large capacity, high voltage, low overvoltage, and miniaturization, higher requirements are put forward for the comprehensive performance of its core component - CuW contact material. Existing studies have shown that the electrical breakdown of CuW alloys often occurs on the weak breakdown phase Cu or on the Cu / W phase interface. By adding alloy elements that are compatible with both Cu and W, on the one hand, the Cu / W phase interface can be microalloyed, an...

Claims

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Application Information

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IPC IPC(8): H01H1/025H01H11/00
Inventor 杨晓红梁淑华肖鹏邹军涛
Owner XIAN UNIV OF TECH
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