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Oxidization and passivation method and passivation device of silicon

A technology of ozone oxidation and gas guiding device, which is applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as device performance impact, and achieve the effects of improving quality, being easy to implement, and reducing temperature

Active Publication Date: 2014-05-07
深圳市石金科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods generally need to be carried out at high temperature (850 ° C ~ 1050 ° C), but high temperature will definitely affect the performance of the device

Method used

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  • Oxidization and passivation method and passivation device of silicon
  • Oxidization and passivation method and passivation device of silicon
  • Oxidization and passivation method and passivation device of silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] This embodiment provides a silicon oxidation passivation method, including:

[0041] 1) Insert the polycrystalline silicon wafer with silicon nanowires obtained by metal silver catalytic etching into the quartz rack, and then put the quartz rack into the sampling area and wait to enter the heating furnace;

[0042] 2) Pour nitrogen into the heating furnace with a nitrogen flow rate of 1000 sccm. After nitrogen is blown for 5 minutes, the quartz holder carrying the sample enters the heating furnace from the sampling area;

[0043] 3) Stop feeding nitrogen into the heating furnace, and start feeding ozone into the heating furnace. The flow of ozone gas is 4000sccm;

[0044] 4) Start the heating furnace at a heating rate of 20°C / min, increase the temperature to 550°C for 30 minutes, and then reduce the temperature to 200°C at a cooling rate of 20°C / min;

[0045] 5) Stop passing ozone and pass nitrogen into the heating furnace with a nitrogen flow rate of 2000sccm;

[0046] 6) After 5...

Embodiment 2

[0053] This embodiment provides a silicon oxidation passivation method, including:

[0054] 1) Insert the single crystal silicon wafer with porous silicon on the surface obtained by catalytic etching of metallic silver into the quartz holder, and then put the quartz holder into the sampling area and wait to enter the heating furnace;

[0055] 2) Pour nitrogen into the heating furnace with a nitrogen flow rate of 2000 sccm. After nitrogen is blown for 4 minutes, the quartz holder carrying the sample enters the heating furnace from the sampling area;

[0056] 3) Stop feeding nitrogen into the heating furnace and start feeding ozone into the heating furnace, the flow of ozone gas flow is 3000sccm;

[0057] 4) Start the heating furnace at a heating rate of 20°C / min, increase the temperature to 800°C for 20 minutes, and then decrease the temperature to 200°C at a cooling rate of 20°C / min;

[0058] 5) Stop passing ozone and pass nitrogen into the heating furnace with a nitrogen flow rate of 3...

Embodiment 3

[0063] This embodiment provides a silicon oxidation passivation method, including:

[0064] 1) Insert the polycrystalline silicon wafer with porous silicon on the surface obtained by electrochemical anodization and etching into the quartz holder, and then put the quartz holder into the sampling area and wait for it to enter the heating furnace;

[0065] 2) Blow nitrogen into the heating furnace with a nitrogen flow rate of 3000 sccm. After nitrogen is blown for 2 minutes, the quartz holder carrying the sample enters the heating furnace from the sampling area;

[0066] 3) Stop passing nitrogen gas into the heating furnace, and start passing ozone into the heating furnace. The ozone gas flow rate is 2000 sccm.

[0067] 4) Start the heating furnace at a heating rate of 15°C / min, increase the temperature to 300°C for 60 minutes, and then decrease the temperature to 150°C at a rate of 15°C / min;

[0068] 5) Stop passing ozone, and pass nitrogen into the heating furnace, the flow of nitrogen i...

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Abstract

The invention provides an oxidization and passivation method of silicon, which is characterized by carrying out oxidization and passivation on the surface of silicon through utilizing ozone. The invention also provides a passivation device for passivating silicon. The passivation method provided by the invention not only reduces the temperature of oxidization and passivation processing and effectively prolongs the service life of few current carriers but also improves the quality of a passivating film, namely a silicon dioxide film.

Description

Technical field [0001] The invention relates to a silicon oxidation passivation method and a passivation device, and is particularly suitable for the passivation of nanometer and micron texturing structures of solar cells. Background technique [0002] The development of modern industry, on the one hand, has increased the demand for energy and triggered an energy crisis; on the other hand, the use of conventional energy has released a large amount of carbon dioxide gas, leading to a global "greenhouse effect". As the most ideal renewable energy source, solar energy has the characteristics of "inexhaustible and inexhaustible". At present, solar power generation is highly valued in countries all over the world, and the conversion efficiency of solar cells is constantly improving. [0003] Considering various factors such as production cost, conversion efficiency, stability, etc., crystalline silicon solar cells have incomparable advantages over other solar cells, accounting for 80% ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王燕刘尧平梅增霞杜小龙
Owner 深圳市石金科技股份有限公司