(In, Mn) As nano-wires and preparation method thereof

A nanowire, single crystal technology, applied in the field of As nanowires with high Mn content, can solve the problem of not getting

Inactive Publication Date: 2012-05-30
WUXI NANLIGONG TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing research on (In,Mn)As / GaAs(001) heteroepitaxy system, either control the growth temperature in the range of 200-300°C to obtain a two-dimensional thin film, or increase the growth temperature to 380°C Obtaining nanodots, but not (In,Mn)As nanowires.

Method used

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  • (In, Mn) As nano-wires and preparation method thereof
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  • (In, Mn) As nano-wires and preparation method thereof

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preparation example Construction

[0021] The preparation method of (In, Mn) As nanowire of the present invention comprises the following steps:

[0022] First, complete the various growth preparation procedures of the MBE equipment: confirm that In, Mn, Ga, As sources are installed in the system; cut the GaAs (001) single crystal substrate in the clean room and adhere it to the sample stage with In; The substrate and sample stage are dehydrated and baked in the entry and exit chamber, and the substrate and sample stage are baked to remove organic impurities in the buffer chamber; the growth chamber is cooled with liquid nitrogen to increase the background vacuum to 5×10 -10 Torr below.

[0023] Then, in the growth chamber, increase the growth temperature to 20°C above the deoxidation temperature of GaAs(001) single crystal, and epitaxially grow a GaAs high-temperature buffer layer with a thickness of 200nm or more to improve the interface quality of heterogeneous growth; reduce the temperature to the set tempe...

Embodiment 1

[0027] 1. First confirm that the MBE system is equipped with at least high-purity Mn source, In source, Ga source, and As source (purity higher than 99.999%). Complete the various growth preparation procedures of the MBE equipment: cut the GaAs(001) single crystal substrate in the clean room according to the requirements and adhere it to the sample stage with molten In; put the substrate together with the sample stage into the inlet and outlet chamber, and Demoisture and bake the substrate and sample stage; transfer the substrate and sample stage to the buffer chamber, and bake the substrate and sample stage to remove organic impurities; cool the growth chamber with liquid nitrogen to increase the background vacuum degrees to 2×10 -10 Torr below.

[0028] 2. Transfer the substrate together with the sample stage to the growth chamber, increase the growth temperature to 20°C above the deoxidation temperature of the GaAs(001) single crystal substrate, and epitaxially grow a 500n...

Embodiment 2

[0032] 1. First confirm that the MBE system is equipped with at least high-purity Mn source, In source, Ga source, and As source (purity higher than 99.999%). Complete the various growth preparation procedures of the MBE equipment: cut the GaAs(001) single crystal substrate in the clean room according to the requirements and adhere it to the sample stage with molten In; put the substrate together with the sample stage into the inlet and outlet chamber, and Demoisture and bake the substrate and sample stage; transfer the substrate and sample stage to the buffer chamber, and bake the substrate and sample stage to remove organic impurities; cool the growth chamber with liquid nitrogen to increase the background vacuum degrees to 5×10 -10 Torr below.

[0033] 2. Transfer the substrate together with the sample stage to the growth chamber, increase the growth temperature to 20°C above the deoxidation temperature of the GaAs(001) single crystal substrate, and epitaxially grow a 200n...

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Abstract

The invention discloses (In, Mn) As nano-wires and a preparation method thereof. According to the present invention, the nano-wires are aligned along the crystal orientation, the epitaxy of the nano-wires grows on the substrate of the GaAs (001) single crystal, and the nano-wires transversely lie on the surface of the GaAs (001) single crystal; In(1-x)MnxAs (0.3<=x<=0.5) is the nano-wires, the sphalerite structure of the GaAs (001) single crystal is maintained, and the In(1-x)MnxAs is spontaneously aligned along the crystal orientation, such that the In(1-x)MnxAs has the magnetic anisotropy along the orientation, wherein the epitaxy of the In(1-x)MnxAs grows, and the In(1-x)MnxAs transversely lies on the surface of the GaAs (001) single crystal; according to the preparation method for the (In, Mn) As nano-wires, a molecular beam epitaxy technology and equipment are adopted, the GaAs (001) single crystal is adopted as the substrate, the Mn content in the elements of In and Mn is increased to 30-50%, and an intermittent growth way is adopted, such that the (In, Mn) As nano-wires are obtained, wherein the epitaxy of the In(1-x)MnxAs grows, and the nano-wires transversely lie on the surface of the GaAs (001) single crystal, and have the uniaxial anisotropy.

Description

technical field [0001] The invention belongs to the (In, Mn) As nanowire technology with high Mn content, in particular to (In, Mn) As nanowire and its preparation method. Background technique [0002] Magnetic semiconductor materials combine the spin transport properties of electrons with semiconductor properties in the same material, and are a class of semiconductor materials with spin polarization. Among many magnetic semiconductor materials, (In 1-x mn x )As (x ≤ 0.12, x is the atomic ratio) dilute magnetic semiconductor thin films have been reported to have room temperature ferromagnetism many times, and have become the materials that both theoretical and experimental physicists pay attention to. Due to (In 1-x mn x )As(x≤0.12) film and GaAs(001) substrate have a large degree of lattice mismatch. Therefore, in order to obtain continuous epitaxial single crystal film, it is necessary to suppress the crystal lattice The three-dimensional growth pattern caused by the ...

Claims

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Application Information

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IPC IPC(8): C30B29/10C30B29/40C30B29/62C30B25/18
Inventor 徐锋陈光杜宇雷李永胜
Owner WUXI NANLIGONG TECH DEV
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