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Temperature compensation high-frequency microwave capacitor medium material

A capacitor dielectric and high-frequency microwave technology, which is applied in the direction of fixed capacitor dielectric and fixed capacitor parts, can solve the problems of unfavorable device working stability and energy utilization rate, large dielectric loss, and can not meet the miniaturization of electronic circuits and their devices demand and other issues

Inactive Publication Date: 2012-07-04
王强
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The microwave ceramic sintering method currently widely used in production cannot meet the miniaturization requirements of electronic circuits and their devices; the dielectric loss is large, which is not conducive to the working stability and energy utilization of devices.

Method used

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Embodiment Construction

[0007] In actual preparation, barium carbonate BaCO 3 , bismuth oxide Bi 2 o 3 , calcium carbonate and titanium dioxide TiO 2 Weigh according to a certain proportion, carry out ball milling and mixing, and after drying, obtain barium titanate BaTiO at 1200 to 1400 degrees Celsius 3 , bismuth titanate Bi 2 o 3 ·3TiO2 2 And calcium titanate CaTiO 3 .

[0008] Modifier with La 2 o 3 、Nd 2 o 3 、Sm 2 o 3 、 Bi 2 o 3 、TiO 2 , Nb 2 o 5 、 Ta 2 o 5 For ingredients within the range of raw material composition, add 0.2-0.6% zinc oxide ZnO, 0.5-2% zirconium oxide ZrO 2 Ball mill and mix for 24 hours, after drying, add 8wt% polyvinyl alcohol to granulate, and sinter at 1360 degrees Celsius to obtain the temperature-compensated high-frequency microwave capacitor dielectric material of the porcelain material formula.

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Abstract

The invention provides moisture-proof treatment of a finished product in the production process of a high-pressure ceramic capacitor. The treatment is characterized in that: barium titanate, bismuth titanate and calcium titanate are taken as raw materials. A temperature compensation high-frequency microwave capacitor medium material is prepared by mixing the materials, adding into polyvinyl alcohol for sintering and molding, and sintering at the temperature of about 1,360 DEG C. In the capacitor material sintered according to a ceramic formula, the compressive strength value is 25 kv / mm, the dielectric constant epsilon is equal to 50, and the quality factor Q is equal to 5*10<-4> under the alternating working current of 1 MHz. During practical preparation, a preparation method comprises the following steps of: weighing barium carbonate (BaCO3), bismuth oxide (Bi2O3), calcium carbonate and titanium dioxide (TiO2) according to a certain mixture ratio, performing ball milling, mixing, and drying to obtain barium titanate (BaTiO3), bismuth titanate (Bi2O3.3TiO2) and calcium titanate CaTiO3 at the temperature of 1,200-1,400 DEG C; and burdening a modifier from La2O3, Nd2O3, Sm2O3, Bi2O3, TiO2, Nb2O5 and Ta2O5 serving as raw materials, adding 0.2-0.6 percent of zinc oxide (ZnO) and 0.5-2 percent of zirconia (ZrO2), performing ball milling and mixing for 24 hours, drying, adding 8 percent by weight of polyvinyl alcohol for granulating, and sintering at the temperature of 1,360 DEG C.

Description

technical field [0001] The invention relates to a microwave electronic ceramic material, in particular to a temperature compensation high-frequency microwave capacitor dielectric material. Background technique [0002] The microwave ceramic sintering method currently widely used in production cannot meet the miniaturization requirements of electronic circuits and devices; the dielectric loss is large, which is not conducive to the working stability and energy efficiency of devices. Contents of the invention [0003] The invention provides a temperature compensation high-frequency microwave capacitor dielectric material. [0004] The technical solution is as follows: [0005] Barium titanate, bismuth titanate and calcium titanate are used as raw materials. Mix the above material composition ranges, add polyvinyl alcohol to sinter and shape, and then sinter at about 1360°C to obtain a temperature-compensated high-frequency microwave capacitor dielectric material. [0006]...

Claims

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Application Information

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IPC IPC(8): C04B35/468C04B35/475C04B35/465H01G4/12
Inventor 王强
Owner 王强
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