Thin film transistor array substrate

Abstract

The invention provides a thin film transistor array substrate, which comprises a substrate, a plurality of polycrystalline silicon islands and a plurality of grids, wherein the substrate is provided with a display region, a grid driving region and a source driving region; the polycrystalline silicon islands are configured on the substrate; each polycrystalline silicon island is provided with a source region and a drain region, and a channel region positioned between the source region and the drain region; the polycrystalline silicon islands comprise a plurality of first polycrystalline silicon islands and a plurality of second polycrystalline silicon islands; the first polycrystalline silicon islands are configured in the display region and the grid driving region; the first polycrystalline silicon islands are provided with primary crystal boundaries and secondary crystal boundaries; the primary crystal boundaries of the first polycrystalline silicon islands are only positioned in the source regions and / or the drain regions; the second polycrystalline silicon islands is configured in the source driving region; the grain sizes in the first polycrystalline silicon islands are different from the grain sizes in a second polycrystalline silicon film; and the grids are configured on the substrate, and correspond to the channel regions.

Description

[0001] This patent application is a divisional application of a Chinese patent application with an application date of September 19, 2008, an application number of 200810161502.7, and an invention title of "Thin Film Transistor Array Substrate and Manufacturing Method". technical field [0002] The present invention relates to a semiconductor element array substrate and a manufacturing method of the semiconductor element array substrate, and in particular to a thin film transistor array substrate and a manufacturing method of the thin film transistor array substrate. Background technique [0003] In recent years, with the increasing maturity of optoelectronic technology and semiconductor manufacturing technology, flat-panel displays have flourished. Among them, liquid crystal displays have gradually replaced traditional cathodes based on their advantages of low-voltage operation, no radiation scattering, light weight, and small size. Ray tube displays have become the mainstre...

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Problems solved by technology

[0007] However, in the above-mentioned TDX laser crystallization technology, since the laser beam is irradiated on the amorphous silicon layer on the substrate, and the substrate is moved for scanning operation in the TDX laser crystallization method, the substrate can only be moved no more than two times each time the substrate is moved. 1 / 1 of the laser irradiated area of ​​the substrate

Therefore, when scanning in one direction by the TDX laser crystallization method, not only more laser shots are required, but also the total number of times to move the substrate is increased. In this way, although high-quality polysilicon can be obtained Membrane, but due to the increase of process time, it is not conducive to the improvement of production capacity

In addition, a single scanning pitch is used on the moving substrate or mask. Although the polysilicon in different regions on the substrate is the same, more laser shots are required, and the total number of times to move the substrate or mask is also less. In this way, although the polysilicon film with uniform quality can be obtained, that is, the main grain boundaries of polysilicon at all positions on the substrate are uniformly distributed, but the increase in process time on the substrate is not conducive to the improvement of production capacity.

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