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A heat treatment method for a passivation layer of a heterogeneous crystalline silicon solar cell

A heat treatment method and solar cell technology, applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of unfavorable industrial production and long time, so as to improve the passivation effect, increase production efficiency, and improve conversion efficiency. Effect

Active Publication Date: 2016-02-17
JIANGSU WANJI DRIVE SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this heat treatment process takes a long time, several hours or even longer, which is not conducive to mass industrial production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A layer of 25nm a-Si:H was prepared as a passivation layer on both sides of the cleaned N-type silicon by PECVD method, and the minority carrier lifetime after passivation was 320μs.

[0015] The high-energy active hydrogen plasma generated by the PECVD method is used to heat-treat the silicon wafer deposited with the passivation layer. The specific process parameters are as follows: a 13.56MHz radio frequency source is used to excite the plasma, and the radio frequency power density added to the plate is 0.08W / cm 2 , the air pressure is 25Pa, and the silicon wafer is heated to 280°C for 30 minutes.

[0016] After heat treatment, the minority carrier lifetime reaches 600μs, and the thickness of the passivation layer is reduced to 15nm. If conventional heat treatment is adopted, the heat treatment time needs to be about 120 minutes.

Embodiment 2

[0018] A layer of 20nm a-Si:H was prepared as a passivation layer on both sides of the cleaned N-type silicon by hot wire CVD method, and the minority carrier lifetime after passivation was 350μs.

[0019] The high-energy active hydrogen atom atmosphere generated by the hot wire CVD method is used to heat-treat the silicon wafer deposited with the passivation layer. The specific process parameters are as follows: Tungsten wire is used as the hot wire, the temperature of the hot wire is heated to 1800°C, the air pressure is 10Pa, and the silicon wafer is heated. to 220°C for 25 minutes.

[0020] After heat treatment, the minority carrier lifetime reaches 680μs, and the thickness of the passivation layer is reduced to 12nm. If conventional heat treatment is adopted, the heat treatment time needs to be about 120 minutes.

Embodiment 3

[0022] A layer of 25nm a-Si:H was prepared as a passivation layer on both sides of the cleaned N-type silicon by PECVD method, and the minority carrier lifetime after passivation was 320μs.

[0023] The high-energy active hydrogen plasma generated by the PECVD method is used to heat-treat the silicon wafer deposited with the passivation layer. The specific process parameters are as follows: a 13.56MHz radio frequency source is used to excite the plasma, and the radio frequency power density added to the plate is 0.8W / cm 2 , the air pressure is 75Pa, and the silicon wafer is heated to 260°C for 40min.

[0024] After heat treatment, the minority carrier lifetime reaches 580μs, and the thickness of the passivation layer is reduced to 14nm. If conventional heat treatment is adopted, the heat treatment time needs to be about 120 minutes.

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Abstract

The invention relates to a heat treatment method for a heterogeneous crystalline silicon solar battery passivation layer. The method comprises the following steps: preparing a heterogeneous crystalline silicon solar battery passivation layer film by a plasma enhanced chemical vapor deposition (PECVD) method or a hot filament chemical vapor deposition (CVD) method; and treating a silicon wafer of the passivation layer at the temperature of between 200 and 300 DEG C for 1 to 60 minutes under the atmosphere of hydrogen plasma-containing hydrogen generated by the PECVD method; or treating the silicon wafer of the passivation layer at the temperature of 200 to 300 DEG C for 1 to 60 minutes under the atmosphere of hydrogen atom-containing hydrogen generated by the hot filament CVD method. According to the method, the passivation effect of the passivation layer on the surface of the silicon wafer can be improved, so that conversion efficiency of the solar battery can be increased. Compared with the conventional inert gas atmosphere, hydrogen atmosphere or vacuum heat treatment process, the method has the advantages of greatly shortening the treatment process time and improving production efficiency and has a good application prospect.

Description

technical field [0001] The invention belongs to the field of post-treatment of solar cell passivation layers, in particular to a heat treatment method for heterogeneous crystalline silicon solar cell passivation layers. Background technique [0002] Solar photovoltaic cells are currently one of the most promising ways of utilizing renewable energy. Among them, crystalline silicon solar cells occupy and will occupy a dominant position in the market for a long time due to their advantages of abundant resources and high process maturity. Among the various crystalline silicon solar cell technologies currently under development, the crystalline silicon heterojunction solar cell represented by the HIT cell produced by Japan's Sanyo Company has been favored for its high conversion efficiency and technical maturity suitable for mass production. widespread attention of the people. [0003] It is generally believed that the passivation effect of the passivation layer on the surface ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 黄海宾王巍李媛媛周浪魏秀琴周潘兵
Owner JIANGSU WANJI DRIVE SCI & TECH CO LTD