Controllable reducing atmosphere Kyropoulos furnace

Abstract

The invention discloses a controllable reducing atmosphere Kyropoulos furnace. The Kyropoulos furnace comprises a software control system, an electric control system, a lifting system, a pressure balancing system, a power-off protection system, a cooling system, a rotary weighing system, a vacuum charging furnace chamber and a thermal field system. The Kyropoulos furnace is characterized by further comprising a set of low vacuum pressure balancing system. According to the controllable reducing atmosphere Kyropoulos furnace, by introducing the low vacuum pressure balancing system and re-integrating the vacuum system, the control system, the thermal field system and the protection system of a traditional Kyropoulos device, the crystal growth and annealing can be completed in one step. Meanwhile, the problem of carbon element and molybdenum element contamination existing in the thermal exchange method and the temperature gradient method is effectively solved and the carbon contamination caused by external factors in the crystal growth process can be avoided. By the controllable reducing atmosphere Kyropoulos furnace provided by the invention, large-sized optical-level sapphire or titanium sapphire crystal can be obtained to meet the needs of high-power lasers in military and civil use in domestic and oversea areas.

Description

technical field [0001] The invention relates to a Kyropoulos method crystal growing device, in particular to a controllable reducing atmosphere Kyropoulos furnace suitable for large size, high vacuum and integrating reducing atmosphere crystal growth and annealing. Background technique [0002] Sapphire crystal is a unique combination of excellent optical properties, physical properties and chemical properties. As the hardest oxide crystal, sapphire is used in a variety of demanding applications due to its optical and physical properties. It has very good thermal characteristics, excellent electrical and dielectric properties, and is chemically resistant. With the rapid development of science and technology, sapphire crystal has become an extremely important basic material for modern industry, especially microelectronics and optoelectronics industry. Therefore, growing large-size and high-quality sapphire has become a hot research topic in the world. [0003] On the other...

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Problems solved by technology

[0006] In view of the above-mentioned problems and deficiencies in the prior art, the purpose of the present invention is to provide a controllable reducing atmosphere foaming furnace, which reintegrates the vacuum system, control system, temperature field system, and protection system of the existing traditional foaming furnace, and solves the problem of Vacuum and reducing atmosphere switching control issues to achieve integrated processing of large-sized, high vacuum and reducing atmosphere crystal growth and annealing

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