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Diamond nanometer pit array and preparation method thereof

A nano-pit and diamond technology, which is applied in the field of diamond nano-structure and its preparation, can solve the problems of uneven size and distribution of etching pits, and achieve the effects of improving surface pollution, low cost, and simple operation

Inactive Publication Date: 2012-07-11
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the growth process of diamond single crystal, under hydrogen plasma atmosphere, it will be etched to produce a pit structure. This pit structure is generally used in electrochemistry, etc., but the size and distribution of etching pits under this condition are not uniform.

Method used

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  • Diamond nanometer pit array and preparation method thereof
  • Diamond nanometer pit array and preparation method thereof
  • Diamond nanometer pit array and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0024] For the specific implementation process of the diamond nanopit array in this embodiment, please refer to figure 1 .

[0025] Step 1, cleaning of the diamond surface.

[0026] Put the HPHT Ib (100) diamond single crystal into concentrated sulfuric acid and concentrated nitric acid for cooking (concentrated sulfuric acid: concentrated nitric acid=1~2:2~1 by volume), then ultrasonically clean with acetone and alcohol, dry with nitrogen and wait for use.

[0027] The second step is to coat the diamond surface with gold film.

[0028] Using the ion sputtering method, put the cleaned diamond into the vacuum chamber, turn on the mechanical pump, and after the vacuum is pumped to 5-7Pa, pass in argon to stabilize the pressure at 12-13Pa, rotate the high-pressure adjustment knob, and adjust the gold target. The voltage is 1400V, and the sputtering is performed for 8 to 10 seconds.

[0029] The third step is plasma etching.

[0030] The diamond single crystal covered with th...

Embodiment 2

[0033] The specific steps are the same as in Example 1, except that the flow of oxygen is reduced. The flow rate of oxygen was 6 sccm, and the etching was performed for 60 seconds under the conditions of a pressure of 3 kPa and a microwave power of 200 W. An array of diamond nanopits can also be obtained, but the etch rate is lower than in Example 1.

Embodiment 3

[0035] The specific steps are the same as those in Example 1, except that the flow rate of oxygen is increased. The flow rate of oxygen was 15 sccm, and the etching was performed for 60 seconds under the conditions of a pressure of 3 kPa and a microwave power of 200 W. An array of diamond nanopits can also be obtained, and the etching rate is higher than that of Example 1.

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Abstract

The invention provides a diamond nanometer pit array and a preparation method thereof, which belong to the technical field of diamond nanometer structures. The diamond nanometer pit array is formed in such a way that the (100)-surface diamond monocrystalline surface is etched into nanometer pits with average density of 0.5x109-1.5x109cm-2; longitudinal sections of the nanometer pits are of inverted trapezoidal shapes; pit openings are 80-150 nanometers wide; and diamond nanometer particles can be placed in the pits. The preparation method comprises the following steps of: cleaning the diamond monocrystalline surface; sputtering a diamond film on the diamond monocrystalline surface by an ion sputtering method; and etching the diamond monocrystalline coated with the diamond film by a microwave excitation oxygen plasma. The diamond nanometer pit array and the preparation method thereof, provided by the invention, have the advantages of simplicity in operation, low cost, large-area production feasibility, safety and no pollution of etching gases as well as the like; a stable base is provided to the diamond nanometer particles through the combination of wide application of the nanometer diamond and excellent property of the diamond; and problems that diamond nanometer particles are easy to be aggregated in the application and surface pollution is caused to the adding of the stabilizing agent can be solved.

Description

technical field [0001] The invention belongs to the technical field of diamond nanostructures and preparations thereof, and relates to a method for preparing a diamond nanometer pit array structure on a diamond single crystal substrate by etching with oxygen plasma, and one or more gold nanoparticles can be placed in the pits Structure. Background technique [0002] Diamond has excellent physical and chemical properties, and has broad application prospects in the fields of mechanical processing, microelectronics, optics and electrochemistry. However, the potential applications of materials are not only related to their own intrinsic properties, but also depend on the design of the material's surface. In recent years, the preparation of different nanostructures of diamond has attracted the attention of researchers in various fields, such as diamond nanocones, nanowires, nanorods, etc. Therefore, it is necessary to continuously explore new diamond structures to broaden the a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/12
Inventor 李红东宋婕王启亮翟秀华成绍恒
Owner JILIN UNIV