Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector

Abstract

The invention discloses a modeling method for an equivalent circuit of a high-sensitivity quantum effect photodetector. The modeling method is characterized in that a quantum dot-quantum well photodetector is subjected to electrical characteristic tests under the conditions of different radiation powers and device biases, and an equivalent circuit model is established by using a 'VerilogA' language, and is verified by circuit simulation software, so that a photodetector model capable of accurately reflecting the characteristics of devices with different structures is provided for the design of a readout circuit. Compared with the prior art, the modeling method disclosed by the invention has the advantages that: the modeling method is simple in modeling procedure, flexible in modification and high in efficiency; settings of different corresponding optical power and device bias parameters can be conveniently modified; and the different optical powers and the different device biases can be realized by directly inputting specific data in corresponding preset optical power and device bias parameters in the attributes of the equivalent circuit model.

Description

Technical field [0001] The invention relates to the technical field of electronics and circuit design, in particular to a method for modeling the equivalent circuit of a high-sensitivity quantum effect photodetector. Background technique [0002] The photodetector plays the role of converting received optical signals into electrical signals. In recent years, with the development of quantum wells, quantum dot physics and material technology, quantum effect photodetectors have also emerged. The quantum effect photodetector has the advantages of low dark current, high sensitivity, large dynamic range, and high photoelectric conversion efficiency under low light irradiation. It is widely used in medical, biomolecular science, environmental monitoring and other fields. The main function of the readout circuit in the photodetection system is to preprocess the weak signal of the detector and provide an interface between the signal processing stages. In the design of the readout circuit...

AI Technical Summary

Problems solved by technology

Due to the excessive number of physical characteristic parameters inside the photodetector device and the approximate expressions obtained based on various assumptions when solving a large number of physical characteristic equations, the accuracy of the equivalent circuit model will be greatly affected. Difficulties in circuit design

Moreover, during the solution process, due to the complex structure of the photodetector and the various material parameters used, it will also complicate the programming in the modeling process.

[0004] In the patent number: ZL 200910047116.X "A Design Method for Photodetector Readout Circuit", a simple and practical equivalent circuit modeling method is proposed, which is based on the I-V and C-V electrical characteristics of the device. The limitation of this modeling method is that it cannot reflect the I-V and C-V characteristics of photodetectors under different irradiated light powers, and the I-V and C-V characteristics of photodetectors will change with the irradiated light power

Therefore, the current modeling method for the equivalent circuit of the photodetector has certain limitations.

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