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Positive photosensitive resin composite and method for forming pattern

A technology of photosensitive resin and composition, which is applied in the photoplate-making process of patterned surface, optics, optomechanical equipment, etc. It can solve the problems of poor crack resistance, poor heat resistance, and failure to meet standards, etc.

Active Publication Date: 2012-07-11
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Japanese Patent Publication No. 2-51499 discloses a positive-type photosensitive resin composition comprising a novolac resin obtained by condensation of a mixture of m-cresol, p-cresol and xylenol with aldehydes And a quinone diazide compound, which has the advantages of high sensitivity and high residual film rate in application. However, according to the demand in recent years, the pattern formed by it has the problem of poor heat resistance and cannot meet the standard.
[0004] Therefore, compared with the aforementioned photosensitive resin composition, Japanese Patent Laid-Open No. 2007-304592 patent document discloses using a novolak resin represented by the following structural formula as a photosensitive resin composition, which can form a pattern with good heat resistance on the substrate, However, the pattern formed has the problem of poor crack resistance;

Method used

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  • Positive photosensitive resin composite and method for forming pattern
  • Positive photosensitive resin composite and method for forming pattern
  • Positive photosensitive resin composite and method for forming pattern

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0088] On a four-necked conical flask with a capacity of 1000 milliliters, a nitrogen inlet, a stirrer, a heater, a condenser tube and a thermometer are set, and after introducing nitrogen, 64.89 g (0.6 mol) of m-cresol and 43.26 g (0.4 mol) of p-cresol are added. ), 55.25 g (0.4 mol) of 3,4-dihydroxybenzaldehyde and 1.80 g (0.02 mol) of oxalic acid. The temperature of the reaction solution was raised to 100°C with slow stirring, and polymerized at this temperature for 5 hours. Then, the temperature of the reaction solution was raised to 180° C., and the pressure of 10 mmHg was used for drying under reduced pressure. After the solvent was devolatilized, the hydroxyl-type novolac resin (A-1-1) was obtained.

Synthetic example 2

[0090] The hydroxy-type novolac resin (A-1-2) was prepared in the same steps as in Synthesis Example 1 above, except that 48.85 g (0.4 mol) of o-hydroxybenzaldehyde was used to replace 3,4-dihydroxybenzaldehyde.

Synthetic example 3

[0092] Hydroxy-type novolac resin (A-1-3) was prepared in the same steps as in Synthesis Example 1 above, except that 61.65 g (0.4 moles) of 2,3,4-trihydroxybenzaldehyde was used to replace 3,4-dihydroxy Benzaldehyde.

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Abstract

The invention relates to a positive photosensitive resin composite and a method for forming a pattern and especially to a positive photosensitive resin composite having good anti-cracking performance and a method for using the composite to form the pattern. The positive photosensitive resin composite contains novolac resin (A), epoxy resin (B) having epoxy propyl, naphthoquinone sulfoacid ester (C) and solvent (D), wherein the novolac resin (A) contains hydroxy novolac resin (A-1). The hydroxy novolac resin (A-1) is prepared by condensing hydroxy benzaldehyde compound and aromatic hydroxyl compound.

Description

technical field [0001] The present invention relates to a positive-type photosensitive resin composition and a method for forming a pattern using the composition. In particular, a positive-type photosensitive resin composition with excellent crack resistance used in the manufacture of semiconductor integrated circuit elements and thin film transistor (hereinafter referred to as TFT) liquid crystal display elements and a method for forming a pattern using the composition are provided. Background technique [0002] On the insulating film or conductive metal film that forms fine circuit patterns such as liquid crystal display device circuits or semiconductor integrated circuits on the substrate, the photoresist composition is uniformly coated, and exposed and developed under a photomask of a specified shape. A pattern of the desired shape is made. Next, after removing the metal film or insulating film using the patterned photoresist film as a mask, and then removing the remain...

Claims

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Application Information

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IPC IPC(8): G03F7/039G03F7/00G02F1/1368H01L21/77
Inventor 陈凯民施俊安
Owner CHI MEI CORP
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