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Double diffusion metal-oxide-semiconductor (DMOS) device

An oxide semiconductor and double-diffusion technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult to distinguish and identify, increase area, etc., and achieve the effects of optimizing performance, improving production efficiency, and reducing production costs

Active Publication Date: 2012-07-11
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the above-mentioned technical problems, the object of the present invention is to provide a double-diffused metal oxide semiconductor device to solve the problem that the source metal layer and the gate metal layer of the DMOS device are difficult to distinguish and identify during the packaging process, while avoiding the problem of DMOS The device area is increased to reduce production costs and optimize the performance of DMOS devices

Method used

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  • Double diffusion metal-oxide-semiconductor (DMOS) device
  • Double diffusion metal-oxide-semiconductor (DMOS) device
  • Double diffusion metal-oxide-semiconductor (DMOS) device

Examples

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Embodiment 1

[0039] This embodiment provides a DMOS device, such as figure 2 As shown, it is a schematic diagram of a partial structure of the DMOS device, and the DMOS device may specifically include:

[0040] source, gate and drain regions;

[0041] A source metal layer 101 and a gate metal layer 102 are correspondingly provided on the surfaces of the source region and the gate region;

[0042] The pattern of the source metal layer 101 is different from that of the gate metal layer 102 .

[0043] In the double-diffused metal oxide semiconductor device provided in this embodiment, the source metal layer and the gate metal layer with different patterns can be formed in the following manner: first, one or more layers of metal are deposited on the surface of the source region and the gate region Layer, coating photoresist on the surface of the metal layer, after exposure and development processes in sequence, the source pattern and the gate pattern are respectively formed in the photoresi...

Embodiment 2

[0050] DMOS devices are divided into VDMOS (vertical double-diffusion mos, vertical double-diffusion metal oxide semiconductor) devices and LDMOS (lateral double-diffusion mos, lateral double-diffusion metal oxide semiconductor) devices. In this embodiment, in the LDMOS device and the VDMOS device, the pattern of the source metal layer is different from the pattern of the gate metal layer.

[0051] The DMOS device in this embodiment may be an LDMOS device. The LDMOS device is a planar structure type, and its source, gate and drain are all drawn out from the upper surface of the device, which is convenient for integration with other devices. The source area is self-aligned, and the gate metal layer and the drain area are separated to reduce input and feedback capacitance and alleviate short channel effects. The LDMOS device forms a channel through the common diffusion of the source region and the well region surrounding the source region. Its turn-on voltage is close to that o...

Embodiment 3

[0055] DMOS devices can also be divided into N-channel DMOS devices and P-channel DMOS devices according to different carrier particles. In the N-channel DMOS device and the P-channel DMOS device, the pattern of the source metal layer is different from that of the gate metal layer.

[0056] The substrate of an N-channel DMOS device is N - Type material, perform P-type diffusion in the area set on the substrate to form a P-type region, and perform N through the same mask + Diffusion to form source and drain regions. The lateral dimension of the P-type region is the channel length. If the lateral diffusion depth is the same as the vertical direction, the channel length can be controlled within 1um, determined by N - layer can get higher base voltage and lower feedback capacitance, so as to realize improved DMOS device performance.

[0057] The P-channel DMOS device of this embodiment is similar in structure and formation to the N-channel DMOS device, and the types of doped par...

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Abstract

The embodiment of the invention discloses a double diffusion metal-oxide-semiconductor (DMOS) device, which comprises a source area, a gate area and a drain area, wherein a source electrode metal layer and a gate electrode metal layer are respectively and correspondingly arranged on the surfaces of the source area and the gate area; and the pattern of the source electrode metal layer is different from the pattern of the gate electrode metal layer. According to the technical scheme provided by the embodiment, the patterns of the source electrode metal layer and the gate electrode metal layer are different in the DMOS device, so in a subsequent device packaging process, the source electrode metal layer and the gate electrode metal layer of packaging equipment can be distinguished and identified according to different patterns, the distance between the source electrode metal layer and the gate electrode metal layer does not need to be increased according to the technical scheme, the area of the DMOS device can be reduced, so the production cost is further reduced, and the performance of the DMOS device is optimized. In addition, a special technological step for distinguishing the source electrode metal layer from the gate electrode metal layer is not needed to be added for producing the DMOS device, so the production process can be simplified, and the production efficiency is improved.

Description

Technical field: [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a double-diffused metal oxide semiconductor device. Background technique: [0002] DMOS (double-diffusion metal-oxide-semiconductor, double-diffusion metal oxide semiconductor) devices are similar in structure to CMOS devices, including source, gate, and drain electrodes. There are two main types, which are divided into VDMOS (vertical double-diffusion mos, Vertical double-diffusion metal oxide semiconductor) devices and LDMOS (lateral double-diffusion mos, lateral double-diffusion metal oxide semiconductor) devices. DMOS devices are optimized for high-current and high-voltage application environments, with good thermal stability and frequency stability, higher gain, higher durability, lower noise, lower feedback capacitance, Constant input impedance and simple bias current circuit can be better suited for applications requiring wide frequency range, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/10H01L29/423
CPCH01L29/41741H01L29/42372H01L29/7811H01L29/4238
Inventor 曹建赵广艳高东岳
Owner CSMC TECH FAB2 CO LTD
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