Preparation method of oriented ZeTe nanocrystals

A nanocrystal and crystal technology, which is applied in the field of preparation of oriented nanocrystal ZnTe crystals, can solve the problems of decreased optical performance, increased process cost, high temperature, etc., and achieves the effects of low preparation cost, simple and efficient preparation method, and uniform grain distribution

Inactive Publication Date: 2012-07-18
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The traditional ZnTe crystal growth requires high conditions, the temperature is as high as 1100 °C, because the vapor pressure rises due to the excessively high growth temperature, which affects the growth process, which is easy to cause explosion, increases the process cost, and the prepared ZnTe crystal will also have excessively high temperature. thermal defects, leading to optical performance degradation

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  • Preparation method of oriented ZeTe nanocrystals
  • Preparation method of oriented ZeTe nanocrystals

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Effect test

Embodiment 1

[0036] The preparation process of a orientation nanocrystalline ZnTe crystal of the present invention comprises the following steps:

[0037] (1) Use metal Zn and Te with a purity higher than 99.999% as raw materials, mix according to the atomic ratio of 1:1, and use high-energy planetary ball milling equipment to uniformly mix the raw materials. The mixing time is 4 hours, and the mixed The raw material is placed in a vacuum of 10 -3 In the vacuum melting furnace of Pa, the melting furnace is heated to 1200°C for melting, and after the melting is completed, it is refined for 20 minutes and then cast to obtain the ZnTe alloy material;

[0038] (2), casting the ZnTe alloy material obtained in step (1) into a columnar mold with an inner diameter of 20 mm, and cooling to room temperature with the furnace to form a ZnTe alloy rod;

[0039] (3) Process the ZnTe alloy rod obtained in step (2) into a diameter of 20 mm and a height of 10 mm to form a ZnTe alloy target;

[0040] (4)...

Embodiment 2

[0049] The preparation process of a orientation nanocrystalline ZnTe crystal of the present invention comprises the following steps:

[0050] (1) Use metal Zn and Te with a purity higher than 99.999% as raw materials, mix according to the atomic ratio of 1:1, and use high-energy planetary ball milling equipment to uniformly mix the raw materials. The mixing time is 4 hours, and the mixed The raw material is placed in a vacuum of 10 -3 In the vacuum melting furnace of Pa, the melting furnace is heated to 1200°C for smelting, after the smelting is completed, it is refined for 20 minutes and then cast to obtain the ZnTe alloy material;

[0051] (2), casting the ZnTe alloy material obtained in step (1) into a columnar mold with an inner diameter of 20 mm, and cooling to room temperature with the furnace to form a ZnTe alloy rod;

[0052] (3) Process the ZnTe alloy rod obtained in step (2) into a diameter of 20 mm and a height of 10 mm to form a ZnTe alloy target;

[0053] (4) U...

Embodiment 3

[0062] The preparation process of a orientation nanocrystalline ZnTe crystal of the present invention comprises the following steps:

[0063] (1) Use metal Zn and Te with a purity higher than 99.999% as raw materials, mix according to the atomic ratio of 1:1, and use high-energy planetary ball milling equipment to uniformly mix the raw materials. The mixing time is 4 hours, and the mixed The raw material is placed in a vacuum of 10 -3 In the vacuum melting furnace of Pa, the melting furnace is heated to 1200°C for melting, and after the melting is completed, it is refined for 20 minutes and then cast to obtain the ZnTe alloy material;

[0064] (2), casting the ZnTe alloy material obtained in step (1) into a columnar mold with an inner diameter of 20 mm, and cooling to room temperature with the furnace to form a ZnTe alloy rod;

[0065] (3) Process the ZnTe alloy rod obtained in step (2) into a diameter of 20 mm and a height of 10 mm to form a ZnTe alloy target;

[0066] (4)...

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Abstract

The invention discloses a preparation method of oriented ZeTe nanocrystals, which includes the following steps: synthesizing a ZnTe alloy material in vacuum by taking metals Ze and Te having purities higher than 99.99% as raw materials, cleaning the alloy material with deionized water, bonding on an object stage of pulsed laser deposition equipment with conducting silver glue adhesive to obtain a sputtering target material, sputtering the ZeTe target material at a room temperature with a pulsed laser energy density of 2-5J / cm<2>, and carrying out in-situ annealing treatment of the sputtered film at 30-400 DEG C to obtain the oriented ZeTe nanocrystals, wherein the distance between the target material and a substrate is set to be 5cm, the sputtering substrate is glass, sapphire, monocrystalline silicon and the like. The obtained oriented ZeTe nanocrystals have a grain size of about 20-60nm, and have orientations (110, 111). Compared with the traditional preparation method, the preparation method disclosed by the invention can realize oriented growth of the ZeTe nanocrystals through controlling the annealing temperature after sputtering and controlling the substrate.

Description

technical field [0001] The invention relates to a method for preparing oriented nanocrystalline ZnTe crystals, which belongs to the new material field of nanocrystalline photoelectric materials. Background technique [0002] Zinc telluride (ZnTe) is an excellent II-VI compound semiconductor material with a wide bandgap. The bandgap at room temperature is 2.26eV, and it has the advantages of direct bandgap and heavy doping. It has broad application prospects in thin-film solar cells, semiconductor light-emitting devices, blue-green light-emitting diodes, optical waveguides and modulators. [0003] Oriented nanocrystalline ZnTe crystals show high transmittance and strong excitation spectrum due to relatively high anisotropy, and have a wide range of potential applications in the fields of optoelectronic displays and solar window layers. The performance of oriented nanocrystalline ZnTe crystal has a great relationship with the preparation method used, and the quality of the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B23/00
Inventor 王占勇钟柳明金敏徐家跃申慧房永征
Owner SHANGHAI INST OF TECH
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